型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ7130 | INFINEON |
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100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY | |
IRHNJ7130B | INFINEON |
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Power Field-Effect Transistor, | |
IRHNJ7130PBF | INFINEON |
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Power Field-Effect Transistor, 14.4A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNJ7130SCS | INFINEON |
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Rad hard, 100V, 9.1A, single, N-channel MOSFET, R4 in a SMD-0.5 package - SMD-0.5, 100 kra | |
IRHNJ7230 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ7330SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ7330SEPBF | INFINEON |
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Power Field-Effect Transistor, 5A I(D), 400V, 1.39ohm, 1-Element, N-Channel, Silicon, Meta | |
IRHNJ7330SESCS | INFINEON |
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Power Field-Effect Transistor, 5.3A I(D), 400V, 1.2ohm, 1-Element, N-Channel, Silicon, Met | |
IRHNJ7330SESCSPBF | INFINEON |
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暂无描述 | |
IRHNJ7430SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |