PD-97857
IRHNJ6S7230
200V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
TECHNOLOGY
R
6
Product Summary
Part Number
IRHNJ6S7230
IRHNJ6S3230
Radiation Level RDS(on)
ID
100 kRads(Si)
300 kRads(Si)
16A
16A
0.13
0.13
SMD-0.5
Description
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Package
IR HiRel R6 S-line technology provides high performance
power MOSFETs for space applications. These devices
have been characterized for both Total Dose and Single
Event Effect (SEE) with useful performance up to LET of
60 (MeV/(mg/cm2). The combination of low RDS(on) and
low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor
controllers. These devices retain all of the well established
advantages of MOSFETs such as voltage control, fast
switching, ease of paralleling and temperature stability of
electrical parameters.
Light Weight
Surface Mount
ESD Rating: Class 3A per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
Pre-Irradiation
Units
16
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
10
64
75
0.6
A
IDM
Pulsed Drain Current
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
±20
60
VGS
EAS
IAR
mJ
A
16
7.5
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
8.6
-55 to + 150
TSTG
°C
g
300 (for 5s)
1.0 (Typical)
Weight
For Footnotes, refer to the page 2.
1
2017-04-27