5秒后页面跳转
IRHNJ67134PBF PDF预览

IRHNJ67134PBF

更新时间: 2024-11-24 13:08:51
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 193K
描述
暂无描述

IRHNJ67134PBF 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:CHIP CARRIER, R-CBCC-N3Reach Compliance Code:compliant
风险等级:5.7雪崩能效等级(Eas):60 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):19 A最大漏源导通电阻:0.088 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:RECTANGULAR
封装形式:CHIP CARRIER峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):76 A
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHNJ67134PBF 数据手册

 浏览型号IRHNJ67134PBF的Datasheet PDF文件第2页浏览型号IRHNJ67134PBF的Datasheet PDF文件第3页浏览型号IRHNJ67134PBF的Datasheet PDF文件第4页浏览型号IRHNJ67134PBF的Datasheet PDF文件第5页浏览型号IRHNJ67134PBF的Datasheet PDF文件第6页浏览型号IRHNJ67134PBF的Datasheet PDF文件第7页 
PD-96931A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE-MOUNT (SMD-0.5)  
IRHNJ67134  
150V, N-CHANNEL  
TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNJ67134 100K Rads (Si)  
IRHNJ63134 300K Rads (Si)  
0.08819A  
0.08819A  
SMD-0.5  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer  
(LET) up to 90MeV/(mg/cm2). Their combination of  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
very low R  
and faster switching times reduces  
DS(on)  
power loss and increases power density in today’s  
high speed switching applications such as DC-DC  
converters and motor controllers. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, ease of paralleling  
and temperature stability of electrical parameters.  
Ceramic Package  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
19  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
12  
76  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
75  
W
W/°C  
V
D
C
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
60  
GS  
E
mJ  
A
AS  
I
19  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
8.6  
T
-55 to 150  
J
oC  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
02/03/05  

与IRHNJ67134PBF相关器件

型号 品牌 获取价格 描述 数据表
IRHNJ67134SCS INFINEON

获取价格

Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ67230A INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230B INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230SCS INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230SCV INFINEON

获取价格

Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67234 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ67234B INFINEON

获取价格

Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr
IRHNJ67234SCS INFINEON

获取价格

Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, M
IRHNJ67434 INFINEON

获取价格

Simple Drive Requirements