是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 雪崩能效等级(Eas): | 60 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (ID): | 19 A | 最大漏源导通电阻: | 0.088 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 76 A |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ67134SCS | INFINEON |
获取价格 |
Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) | |
IRHNJ67230A | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230B | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230SCS | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230SCV | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67234 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) | |
IRHNJ67234B | INFINEON |
获取价格 |
Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr | |
IRHNJ67234SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, M | |
IRHNJ67434 | INFINEON |
获取价格 |
Simple Drive Requirements |