Datasheet > IRHNJ67230SCV

IRHNJ67230SCV

更新时间： 2024-11-25 14:56:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
14页	1359K
描述
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL

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技术参数
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IRHNJ67230SCV 技术参数

生命周期：	Active	包装说明：	CHIP CARRIER, R-CBCC-N3
Reach Compliance Code：	compliant	风险等级：	5.69
雪崩能效等级（Eas）：	60 mJ	外壳连接：	DRAIN
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	200 V
最大漏极电流 (ID)：	19 A	最大漏源导通电阻：	0.13 Ω
FET 技术：	METAL-OXIDE SEMICONDUCTOR	JESD-30 代码：	R-CBCC-N3
元件数量：	1	端子数量：	3
工作模式：	ENHANCEMENT MODE	封装主体材料：	CERAMIC, METAL-SEALED COFIRED
封装形状：	RECTANGULAR	封装形式：	CHIP CARRIER
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	76 A
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	BOTTOM	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

IRHNJ67230SCV 数据手册

IRHNJ67230 (JANSR2N7591U3)

PD-96923F

Radiation Hardened Power MOSFET

Surface Mount (SMD-0.5)

200V, 16A, N-channel, R6 Technology

Product Summary

Features



Single event effect (SEE) hardened



Part number: IRHNJ67230 (JANSR2N7591U3),

IRHNJ63230 (JANSF2N7591U3)

REF: MIL-PRF-19500/746

Radiation level: 100 krad(Si),

300 krad(Si)

R_DS(on),max: 130m

I_D: 16A

Low R_DS(on)



Low total gate charge

Simple drive requirements

Hermetically sealed

Ceramic package



Light weight

Surface mount

ESD rating: Class 3A per MIL-STD-750, Method 1020

Potential Applications



DC-DC converter

Motor drives



SMD-0.5

Product Validation

Qualified to JANS screening flow according to MIL-PRF-19500 for space applications

Description

IR HiRel R6 technology provides high performance power MOSFETs for space applications. This technology has

over a decade of proven performance and reliability in satellite applications. These devices have been

characterized for both Total Dose and Single Event Effects (SEE). The combination of low R_DS(on)and low gate

charge reduces the power losses in switching applications such as DC to DC converters and motor control. These

devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

Ordering Information

Table 1

Part number

IRHNJ67230

Ordering options

Package

Screening Level

COTS

TID Level

SMD-0.5

100 krad(Si)

300 krad(Si)

IRHNJ67230SCV

IRHNJ67230SCS

JANSR2N7591U3

IRHNJ63230

SMD-0.5

JANTXV equivalent

S-Level

JANS

COTS

JANSF2N7591U3

JANS

Please read the Important Notice and Warnings at the end of this document

page 1 of 14

www.infineon.com/irhirel

2021-08-06

12 3 4 5 6 7...14

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与IRHNJ67230SCV相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ67234	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ67234B	INFINEON	获取价格	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr
IRHNJ67234SCS	INFINEON	获取价格	Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, M
IRHNJ67434	INFINEON	获取价格	Simple Drive Requirements
IRHNJ67434_15	INFINEON	获取价格	Simple Drive Requirements
IRHNJ67C30	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ67C30SCS	INFINEON	获取价格	Rad hard, 600V, 3.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ6S7130	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ6S7130SCS	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ6S7230	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad

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