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IRHNJ67134SCS PDF预览

IRHNJ67134SCS

更新时间: 2024-11-25 14:56:07
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
9页 206K
描述
Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL

IRHNJ67134SCS 数据手册

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PD-96931C  
IRHNJ67134  
RADIATION HARDENED  
POWER MOSFET  
JANSR2N7589U3  
150V, N-CHANNEL  
SURFACE MOUNT (SMD-0.5)  
REF: MIL-PRF-19500/746  
TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on) ID  
QPL Part Number  
IRHNJ67134 100K Rads (Si)  
IRHNJ63134 300K Rads (Si)  
0.08819A  
0.08819A  
JANSR2N7589U3  
JANSF2N7589U3  
SMD-0.5  
International Rectifier’s R6TM technology provides  
superior power MOSFETs for space applications.  
These devices have improved immunity to Single  
Event Effect (SEE) and have been characterized for  
useful performance with Linear Energy Transfer  
(LET) up to 90MeV/(mg/cm2). Their combination of  
Features:  
n
n
n
n
n
n
n
n
n
n
Low RDS(on)  
Fast Switching  
Single Event Effect (SEE) Hardened  
Low Total Gate Charge  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
very low R  
and faster switching times reduces  
DS(on)  
power loss and increases power density in today’s  
high speed switching applications such as DC-DC  
converters and motor controllers. These devices  
retain all of the well established advantages of  
MOSFETs such as voltage control, ease of paralleling  
and temperature stability of electrical parameters.  
Ceramic Package  
Light Weight  
n
ESD Rating: Class 2 per MIL-STD-750,  
Method 1020  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
19  
12  
D
D
GS  
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
C
I
Pulsed Drain Current À  
Max. Power Dissipation  
Linear Derating Factor  
76  
DM  
@ T = 25°C  
P
D
75  
W
W/°C  
V
C
0.6  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy Á  
Avalanche Current À  
±20  
60  
GS  
E
mJ  
A
AS  
I
19  
AR  
E
Repetitive Avalanche Energy À  
Peak Diode Recovery dv/dt   
Operating Junction  
7.5  
mJ  
V/ns  
AR  
dv/dt  
8.6  
T
-55 to 150  
J
°C  
g
T
Storage Temperature Range  
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
1.0 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
08/20/13  

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