型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ67230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) | |
IRHNJ67230A | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230B | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230SCS | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67230SCV | INFINEON |
获取价格 |
Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ67234 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) | |
IRHNJ67234B | INFINEON |
获取价格 |
Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr | |
IRHNJ67234SCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, M | |
IRHNJ67434 | INFINEON |
获取价格 |
Simple Drive Requirements | |
IRHNJ67434_15 | INFINEON |
获取价格 |
Simple Drive Requirements |