Datasheet > IRHNJ67134B

IRHNJ67134B

更新时间： 2024-11-06 14:56:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	206K
描述
Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed

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IRHNJ67134B 数据手册

PD-96931C

IRHNJ67134

RADIATION HARDENED

POWER MOSFET

JANSR2N7589U3

150V, N-CHANNEL

SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/746

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on) ID

QPL Part Number

IRHNJ67134 100K Rads (Si)

IRHNJ63134 300K Rads (Si)

0.088Ω 19A

JANSR2N7589U3

JANSF2N7589U3

SMD-0.5

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²). Their combination of

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

very low R

and faster switching times reduces

DS(on)

power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Ceramic Package

Light Weight

ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

8.6

-55 to 150

°C

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

For footnotes refer to the last page

www.irf.com

08/20/13

12 3 4 5 6 7...9

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与IRHNJ67134B相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ67134PBF	INFINEON	获取价格	暂无描述
IRHNJ67134SCS	INFINEON	获取价格	Rad hard, 150V, 19A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ67230A	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230B	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230SCS	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67230SCV	INFINEON	获取价格	Rad hard, 200V, 16A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67234	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ67234B	INFINEON	获取价格	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 kr
IRHNJ67234SCS	INFINEON	获取价格	Power Field-Effect Transistor, 12.4A I(D), 250V, 0.21ohm, 1-Element, N-Channel, Silicon, M

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