Datasheet > IRHNJ63234SCS

IRHNJ63234SCS

更新时间： 2024-11-06 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
9页	202K
描述
Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 krad(Si) TID, QIRL

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IRHNJ63234SCS 数据手册

PD-97197C

IRHNJ67234

RADIATION HARDENED

POWER MOSFET

JANSR2N7593U3

250V, N-CHANNEL

SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/746

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on) ID

QPL Part Number

IRHNJ67234 100K Rads (Si)

IRHNJ63234 300K Rads (Si)

0.21Ω 12.4A JANSR2N7593U3

0.21Ω 12.4A JANSF2N7593U3

SMD-0.5

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²). Their combination of

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

very low R

and faster switching times reduces

DS(on)

power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Ceramic Package

Light Weight

ESD Rating: Class 2 per MIL-STD-750,

Method 1020

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

12.4

7.8

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

49.6

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

12.4

7.5

dv/dt

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

5.5

-55 to 150

°C

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

For footnotes refer to the last page

www.irf.com

04/08/14

12 3 4 5 6 7...9

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与IRHNJ63234SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ63434	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT
IRHNJ63C30	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ63C30SCS	INFINEON	获取价格	Rad hard, 600V, 3.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 kra
IRHNJ67130	INFINEON	获取价格	100V, N-CHANNEL
IRHNJ67130A	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67130B	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHNJ67130SCS	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67130SCSB	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ67134	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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