Datasheet > IRHNJ63230

IRHNJ63230

更新时间： 2024-11-24 03:46:31

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	144K
描述
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)

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IRHNJ63230 数据手册

PD-96923B

RADIATION HARDENED

POWER MOSFET

SURFACE-MOUNT (SMD-0.5)

IRHNJ67230

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number

IRHNJ67230

IRHNJ63230

Radiation Level RDS(on)

100K Rads (Si) 0.13Ω 16A

300K Rads (Si) 0.13Ω 16A

SMD-0.5

International Rectifier’s R6^TMtechnology provides

superior power MOSFETs for space applications.

These devices have improved immunity to Single

Event Effect (SEE) and have been characterized for

useful performance with Linear Energy Transfer

(LET) up to 90MeV/(mg/cm²). Their combination of

Features:

Low RDS(on)

Fast Switching

Single Event Effect (SEE) Hardened

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

very low R

and faster switching times reduces

DS(on)

power loss and increases power density in today’s

high speed switching applications such as DC-DC

converters and motor controllers. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, ease of paralleling

and temperature stability of electrical parameters.

Ceramic Package

Light Weight

Pre-Irradiation

Absolute Maximum Ratings

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

6.2

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

For footnotes refer to the last page

www.irf.com

03/17/06

12 3 4 5 6 7 8

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