Datasheet > IRHNJ5S97130

IRHNJ5S97130

更新时间： 2024-11-25 14:56:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	898K
描述
-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package?

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IRHNJ5S97130 数据手册

PD-97927D

IRHNJ5S97130

100V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

TECHNOLOGY

Product Summary

Part Number

IRHNJ5S97130

IRHNJ5S93130

Radiation Level RDS(on)

I_D

100 kRads(Si)

300 kRads(Si)

-12.5A

0.205

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

IR HiRel R5 S-line technology provides superior power

MOSFETs for space applications. These devices have

improved immunity to Single Event Effect (SEE) and have

been characterized for useful performance with Linear

Energy Transfer (LET) up to 60MeV/(mg/cm²). Their

combination of low RDS(on) and faster switching times

reduces the power losses and increases power density in

today’s high speed switching applications such as DC-DC

converters and motor controllers. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= -9.6V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= -9.6V, T_C= 100°C Continuous Drain Current

-12.5

-8.0

-50

I_DM@ T_C= 25°C

P_D@ T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

W/°C

Linear Derating Factor

0.6

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 12

Single Pulse Avalanche Energy 

Avalanche Current 

-12.5

7.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

V/ns

-6.2

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

1.0 (Typical)

For Footnotes, refer to the page 2.

2020-02-14

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHNJ5S97130相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ5S97130SCS	INFINEON	获取价格	-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level
IRHNJ5S97230	INFINEON	获取价格	-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package?
IRHNJ5S97230SCS	INFINEON	获取价格	-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level
IRHNJ63130	INFINEON	获取价格	100V, N-CHANNEL
IRHNJ63130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHNJ63134	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ63134PBF	INFINEON	获取价格	暂无描述
IRHNJ63230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ63234	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ63234SCS	INFINEON	获取价格	Rad hard, 250V, 12.4A, single, N-channel MOSFET, R6 in a SMD-0.5 package - SMD-0.5, 300 kr

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