Datasheet > IRHNJ597130SCSB

IRHNJ597130SCSB

更新时间： 2024-11-06 14:56:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	2184K
描述
Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL, Lead Attached and Formed

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IRHNJ597130SCSB 数据手册

PD-94047D

IRHNJ597130

JANSR2N7545U3

100V, P-CHANNEL

REF: MIL-PRF-19500/712

RADIATION HARDENED

POWER MOSFET

TECHNOLOGY

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

IRHNJ597130

IRHNJ593130

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7545U3

JANSF2N7545U3

100 kRads(Si)

300 kRads(Si)

-12.5A

0.205

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Electrically Isolated

 Ceramic Package

IR HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability of

electrical parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 1B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

I_D1@ V_GS= -12V, T_C= 25°C

I_D2@ V_GS= -12V, T_C= 100°C

I_DM@ T_C= 25°C

Value

Parameter

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

Units

-12.5

-8.0

-50

P_D@ T_C= 25°C

W/°C

Linear Derating Factor

0.6

V_GS

E_AS

I_AR

Gate-to-Source Voltage

± 20

Single Pulse Avalanche Energy 

Avalanche Current 

-12.5

7.5

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

V/ns

-6.2

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

1.0 (Typical)

For Footnotes, refer to the page 2.

2019-02-25

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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与IRHNJ597130SCSB相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ597130SCSPBF	INFINEON	获取价格	暂无描述
IRHNJ597130SCVA	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597130SCVB	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ597230A	INFINEON	获取价格	Power Field-Effect Transistor,
IRHNJ597Z30	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ597Z30SCS	INFINEON	获取价格	Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ598130	ETC	获取价格	-100V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package
IRHNJ598230	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Met
IRHNJ5S97130	INFINEON	获取价格	-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package?

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