Datasheet > IRHNJ597034SCSB

IRHNJ597034SCSB

更新时间： 2024-09-17 14:56:07

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	206K
描述
Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL, Lead Attached and Formed

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IRHNJ597034SCSB 数据手册

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PD-94608C

IRHNJ597034

JANSR2N7520U3

IRHNJC597034

JANSR2N7520U3C

60V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

^{REF: MIL}5^{-PRF-19500/732}

TECHNOLOGY

Product Summary

Part Number

IRHNJ597034

IRHNJ593034

Radiation Level RDS(on)

100K Rads (Si) 0.085Ω -21A JANSR2N7520U3

300K Rads (Si) 0.085Ω -21A JANSF2N7520U3

QPL Part Number

Refer to Page 8 for Additional Part Number -

IRHNJC597034 - SMD-0.5 (Ceramic Lid)

SMD-0.5

(Metal Lid)

International Rectifier’s R5^TMtechnology provides high

performance power MOSFETs for space applications.

These devices have been characterized for Single Event

Effects (SEE) with useful performance up to an LET of

80 (MeV/(mg/cm²)). The combination of low RDS(on) and

low gate charge reduces the power losses in switching

applications such as DC to DC converters and motor

control. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching, ease of paralleling and temperature stability

of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-21

= -12V, T = 100°C Continuous Drain Current

-13.3

-84

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

W/°C

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

110

-21

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

-2.0

-55 to 150

Storage Temperature Range

°C

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

For footnotes refer to the last page

www.irf.com

02/11/15

12 3 4 5 6 7 8

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与IRHNJ597034SCSB相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ597034SCV	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ597034SCVA	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ597034SCVB	INFINEON	获取价格	Rad hard, -60V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra
IRHNJ597130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ597130B	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597130SCS	INFINEON	获取价格	暂无描述
IRHNJ597130SCSA	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597130SCSB	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100
IRHNJ597130SCSPBF	INFINEON	获取价格	暂无描述
IRHNJ597130SCVA	INFINEON	获取价格	Rad hard, -100V, -12.5A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100

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