是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.32 |
雪崩能效等级(Eas): | 152 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 30 V |
最大漏极电流 (Abs) (ID): | 22 A | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.07 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
最低工作温度: | -55 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | P-CHANNEL |
最大功率耗散 (Abs): | 75 W | 最大脉冲漏极电流 (IDM): | 88 A |
认证状态: | Not Qualified | 参考标准: | RH - 100K Rad(Si) |
子类别: | Other Transistors | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
最大关闭时间(toff): | 120 ns | 最大开启时间(吨): | 125 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ597Z30SCS | INFINEON |
获取价格 |
Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 kra | |
IRHNJ598130 | ETC |
获取价格 |
-100V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package | |
IRHNJ598230 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Met | |
IRHNJ5S97130 | INFINEON |
获取价格 |
-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package? | |
IRHNJ5S97130SCS | INFINEON |
获取价格 |
-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level | |
IRHNJ5S97230 | INFINEON |
获取价格 |
-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package? | |
IRHNJ5S97230SCS | INFINEON |
获取价格 |
-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level | |
IRHNJ63130 | INFINEON |
获取价格 |
100V, N-CHANNEL | |
IRHNJ63130PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNJ63134 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5) |