Datasheet > IRHNJ597Z30SCS

IRHNJ597Z30SCS

更新时间： 2024-11-25 14:56:11

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	987K
描述
Rad hard, -30V, -22A, single, P-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, QIRL

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IRHNJ597Z30SCS 数据手册

PD-94661D

IRHNJ597Z30

JANSR2N7519U3

30V, P-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

REF: MIL-PRF-19500/732

TECHNOLOGY

Product Summary

Part Number

IRHNJ597Z30

IRHNJ593Z30

Radiation Level RDS(on)

I_D

QPL Part Number

JANSR2N7519U3

JANSF2N7519U3

100 kRads(Si)

300 kRads(Si)

-22A*

0.070

SMD-0.5

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic Package

R HiRel R5 technology provides high performance power

MOSFETs for space applications. These devices have

been characterized for both Total Dose and Single Event

Effect (SEE) with useful performance up to LET of 80

(MeV/(mg/cm²). The combination of low RDS(on) and low

gate charge reduces the power losses in switching

applications such as DC-DC converters and motor

controllers. These devices retain all of the well established

advantages of MOSFETs such as voltage control, fast

switching and temperature stability of electrical

parameters.

 Light Weight

 Surface Mount

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Parameter

Value

Units

I_D1@ V_GS= -12V, T_C= 25°C

I_D2@ V_GS= -12V, T_C= 100°C

I_DM@ T_C= 25°C

Continuous Drain Current

Pulsed Drain Current 

Maximum Power Dissipation

-22*

-18

-88

W/°C

P_D@ T_C= 25°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

± 20

V_GS

E_AS

I_AR

152

-22

E_AR

dv/dt

T_J

7.5

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

V/ns

-1.57

-55 to + 150

T_STG

°C

300 (for 5s)

1.0 (Typical)

Weight

*Current is limited by package

For Footnotes refer to the page 2.

International Rectifier HiRel Products, Inc.

2020-11-09

12 3 4 5 6 7 8

中文翻译

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与IRHNJ597Z30SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ598130	ETC	获取价格	-100V 1000kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a SMD-0.5 package
IRHNJ598230	INFINEON	获取价格	Power Field-Effect Transistor, 8A I(D), 200V, 0.505ohm, 1-Element, P-Channel, Silicon, Met
IRHNJ5S97130	INFINEON	获取价格	-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package?
IRHNJ5S97130SCS	INFINEON	获取价格	-100V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level
IRHNJ5S97230	INFINEON	获取价格	-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package?
IRHNJ5S97230SCS	INFINEON	获取价格	-200V 100kRad Single P-Channel TID Hardened MOSFET in a SMD-0.5 package - Screening Level
IRHNJ63130	INFINEON	获取价格	100V, N-CHANNEL
IRHNJ63130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.042ohm, 1-Element, N-Channel, Silicon, Me
IRHNJ63134	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE-MOUNT (SMD-0.5)
IRHNJ63134PBF	INFINEON	获取价格	暂无描述

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