Datasheet > IRHNJ57133SE

IRHNJ57133SE

更新时间： 2024-11-06 03:42:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	178K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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IRHNJ57133SE 数据手册

ꢁ

PD - 94294C

IRHNJ57133SE

JANSR2N7485U3

130V, N-CHANNEL

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

^REF:5^{MIL-PRF-19500/704}

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNJ57133SE 100K Rads (Si) 0.08Ω

ID QPL Part Number

20A JANSR2N7485U3

SMD-0.5

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the

power losses in switching applications such as DC

to DC converters and motor control. These devices

retain all of the well established advantages of

MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of

electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

12.5

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

7.7

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0(Typical)

For footnotes refer to the last page

www.irf.com

05/14/04

12 3 4 5 6 7 8

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