Datasheet > IRHNJ593034

IRHNJ593034

更新时间： 2024-11-08 22:33:35

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	145K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT

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IRHNJ593034 数据手册

PD - 94608

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRHNJ597034

60V, P-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNJ597034 100K Rads (Si) 0.06Ω

IRHNJ593034 300K Rads (Si) 0.06Ω

-22A

SMD-0.5

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low RDS(on) and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= -12V, T = 25°C Continuous Drain Current

-22*

= -12V, T = 100°C Continuous Drain Current

-16

-88

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

107

-22

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

-1.4

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s )

1.0 ( Typical )

* Current is limited by package

For footnotes refer to the last page

www.irf.com

02/13/03

12 3 4 5 6 7 8

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