是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | CHIP CARRIER, R-CBCC-N3 | Reach Compliance Code: | compliant |
风险等级: | 5.7 | 雪崩能效等级(Eas): | 100 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 60 V | 最大漏极电流 (ID): | 22 A |
最大漏源导通电阻: | 0.03 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-CBCC-N3 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 88 A | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
IRHNJ58034PBF | INFINEON | Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta |
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IRHNJ58130 | INFINEON | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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IRHNJ58230 | INFINEON | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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IRHNJ58Z30 | INFINEON | RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) |
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IRHNJ58Z30PBF | INFINEON | Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta |
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IRHNJ593034 | INFINEON | RADIATION HARDENED POWER MOSFET SURFACE MOUNT |
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