型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNJ57130SCSB | INFINEON |
获取价格 |
Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ57130SCSPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Met | |
IRHNJ57133SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ57230 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ57230SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ57230SEA | INFINEON |
获取价格 |
Rad hard, 200V, 12A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad | |
IRHNJ57230SESCS | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRHNJ57230SESCSPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 200V, 0.22ohm, 1-Element, N-Channel, Silicon, Met | |
IRHNJ57234SE | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5) | |
IRHNJ57234SEPBF | INFINEON |
获取价格 |
暂无描述 |