Datasheet > IRHNJ57034B

IRHNJ57034B

更新时间： 2024-09-17 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	186K
描述
Rad hard, 60V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(Si) TID, COTS, Lead Attached and Formed

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IRHNJ57034B 数据手册

ꢁ

PD-93752F

IRHNJ57034

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

JANSR2N7480U3

60V, N-CHANNEL

REF: MIL-PRF-19500/703

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

QPL Part Number

IRHNJ57034 100K Rads (Si)

IRHNJ53034 300K Rads (Si)

IRHNJ54034 500K Rads (Si)

IRHNJ58034 1000K Rads (Si)

0.030Ω 22A* JANSR2N7480U3

0.030Ω 22A* JANSF2N7480U3

0.030Ω 22A* JANSG2N7480U3

0.038Ω

22A* JANSH2N7480U3

SMD-0.5

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space

applications. These devices have been characterized

for Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low Rdson and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of

paralleling and temperature stability of electrical

parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

22*

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

100

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

7.5

V/ns

dv/dt

-55 to 150

^oC

Storage Temperature Range

STG

Pckg. Mounting Surface Temp.

Weight

300 (for 5s)

1.0 (Typical)

* Current is limited by package

For footnotes refer to the last page

www.irf.com

03/12/13

12 3 4 5 6 7 8

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与IRHNJ57034B相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ57034PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHNJ57034SCSA	INFINEON	获取价格	Rad hard, 60V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(
IRHNJ57034SCSB	INFINEON	获取价格	Rad hard, 60V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad(
IRHNJ57130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ57130A	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ57130B	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ57130SCS	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Met
IRHNJ57130SCSA	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ57130SCSB	INFINEON	获取价格	Rad hard, 100V, 22A, single, N-channel MOSFET, R5 in a SMD-0.5 package - SMD-0.5, 100 krad
IRHNJ57130SCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Met

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