Datasheet > IRHNJ53230

IRHNJ53230

更新时间： 2024-11-05 22:28:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	127K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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IRHNJ53230 数据手册

PD - 93753A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

IRHNJ57230

200V, N-CHANNEL

TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNJ57230 100K Rads (Si)

IRHNJ53230 300K Rads (Si)

IRHNJ54230 600K Rads (Si)

IRHNJ58230 1000K Rads (Si)

0.20Ω

0.25Ω

13A

SMD-0.5

International Rectifier’s R5^TMtechnology provides

high performance power MOSFETs for space appli-

cations. These devices have been characterized for

Single Event Effects (SEE) with useful performance

up to an LET of 80 (MeV/(mg/cm²)). The combination

of low Rdson and low gate charge reduces the power

losses in switching applications such as DC to DC

converters and motor control. These devices retain

all of the well established advantages of MOSFETs

such as voltage control, fast switching, ease of paral-

leling and temperature stability of electrical param-

eters.

Features:

Single Event Effect (SEE) Hardened

Ultra low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C

Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

8.2

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

W/°C

Linear Derating Factor

0.6

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

7.5

V/ns

dv/dt

4.4

-55 to 150

Storage Temperature Range

^oC

STG

Pckg. Mounting Surface Temp.

Weight

300 ( for 5s )

1.0 ( Typical )

For footnotes refer to the last page

www.irf.com

07/22/02

12 3 4 5 6 7 8

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