Datasheet > IRHNJ4130SCS

IRHNJ4130SCS

更新时间： 2024-11-05 19:44:27

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	428K
描述
Power Field-Effect Transistor,

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中文翻译

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技术参数
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IRHNJ4130SCS 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.66
Base Number Matches：	1

IRHNJ4130SCS 数据手册

PD-93820C

IRHNJ7130

JANSR2N7380U3

100V, N-CHANNEL

REF: MIL-PRF-19500/614

RAD-Hard HEXFET TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-0.5)

Product Summary

Part Number

IRHNJ7130

IRHNJ3130

IRHNJ5130

IRHNJ8130

Radiation Level

100 kRads(Si)

300 kRads(Si)

500 kRads(Si)

1000 kRads(Si)

RDS(on)

I_D

QPL Part Number

14.4A

JANSR2N7380U3

JANSF2N7380U3

JANSG2N7380U3

JANSH2N7380U3

0.18

0.24

SMD-0.5

Description

Features

IR HiRel RAD-Hard HEXFET technology provides high

performance power MOSFETs for space applications.

This technology has over a decade of proven performance

and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event

Effects (SEE). The combination of low Rdson and low gate

charge reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Ceramic package

 Light Weight

 Surface Mount

 ESD Rating: Class 1C per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

14.4

9.1

57.6

I_DM@T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

W/°C

Maximum Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

0.6

V_GS

E_AS

I_AR

± 20

150

14.4

7.5

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

6.0

-55 to + 150

T_STG

°C

300 (5 sec)

Weight

1.0 (Typical)

For Footnotes, refer to the page 2.

International Rectifier HiRel Products, Inc.

2019-02-05

12 3 4 5 6 7 8

中文翻译

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与IRHNJ4130SCS相关器件

型号	品牌	获取价格	描述	数据表
IRHNJ4230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ53034	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ53034PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHNJ53130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ53230	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ53Z30	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ53Z30PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Meta
IRHNJ54034	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
IRHNJ54034PBF	INFINEON	获取价格	Power Field-Effect Transistor, 22A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Meta
IRHNJ54130	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

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