IRHNB7Z60PBF

更新时间： 2024-11-05 13:02:15

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英飞凌 - INFINEON		/
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IRHNB7Z60PBF 数据手册

PD - 91754A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT(SMD-3)

IRHNB7Z60

30V, N-CHANNEL

RAD-Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level

RDS(on)

IRHNB7Z60

IRHNB3Z60

IRHNB4Z60

100K Rads (Si) 0.009Ω 75*A

300K Rads (Si) 0.009Ω 75*A

600K Rads (Si) 0.009Ω 75*A

IRHNB8Z60 1000K Rads (Si) 0.009Ω 75*A

SMD-3

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rds(on) and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Ceramic Package

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

75*

@ V

= 12V, T = 100°C Continuous Drain Current

75*

300

Pulsed Drain Current ➀

Max. Power Dissipation

@ T = 25°C

300

W/°C

Linear Derating Factor

2.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

0.35

-55 to 150

Storage Temperature Range

^oC

STG

300 ( for 5 sec.)

3.3 (Typical )

Package Mounting Surface Temperature

Weight

For footnotes refer to the last page

*Current is limited by internal wire diameter

www.irf.com

12/18/01

12 3 4 5 6 7 8

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