Datasheet > IRHNB7260

IRHNB7260

更新时间： 2024-11-24 03:42:23

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	117K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)

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IRHNB7260 数据手册

PD - 91798A

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT(SMD-3)

IRHNB7260

200V, N-CHANNEL

RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNB7260

IRHNB3260

IRHNB4260

IRHNB8260

100K Rads (Si) 0.070Ω

300K Rads (Si) 0.070Ω

600K Rads (Si) 0.070Ω

1000K Rads (Si) 0.070Ω

43A

SMD-3

International Rectifier’s RADHard HEXFET^®technol-

ogy provides high performance power MOSFETs for

space applications. This technology has over a de-

cade of proven performance and reliability in satellite

applications. These devices have been character-

ized for bothTotal Dose and Single Event Effects (SEE).

The combination of low Rdson and low gate charge

reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages

of MOSFETs such as voltage control, fast switching,

ease of paralleling and temperature stability of elec-

trical parameters.

Features:

Single Event Effect (SEE) Hardened

Low RDS(on)

Low Total Gate Charge

Proton Tolerant

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

172

Pulsed Drain Current ➀

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

300

W/°C

2.4

Gate-to-Source Voltage

±20

Single Pulse Avalanche Energy ➀

Avalanche Current ➀

500

Repetitive Avalanche Energy ➀

Peak Diode Recovery dv/dt ➀

Operating Junction

V/ns

dv/dt

5.7

-55 to 150

Storage Temperature Range

^oC

STG

300 (for 5 Sec.)

3.5 (Typical )

Package Mounting Surface Temperature

Weight

For footnotes refer to the last page

www.irf.com

12/7/01

12 3 4 5 6 7 8

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