型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNB7460SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) | |
IRHNB7460SEPBF | INFINEON |
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Power Field-Effect Transistor, 20A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Met | |
IRHNB7Z60 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNB7Z60PBF | INFINEON |
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暂无描述 | |
IRHNB8064 | ETC |
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60V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package | |
IRHNB8160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) | |
IRHNB8260 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNB8260PBF | INFINEON |
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Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNB8Z60 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNJ3130 | INFINEON |
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100V, N-CHANNEL RAD-Hard HEXFET MOSFET TECHNOLOGY |