5秒后页面跳转
捷配首页

Datasheet > IRHNA93064
IRHNA93064 PDF预览

IRHNA93064

更新时间： 2024-02-07 23:39:16
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 208K
描述
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 48A I(D) | SMT

阅读下载

获取价格

IRHNA93064 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-CBCC-N3Reach Compliance Code：compliant
风险等级：5.84其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：48 A最大漏源导通电阻：0.048 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：P-CHANNEL最大脉冲漏极电流 (IDM)：192 A
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON

IRHNA93064 数据手册

 浏览型号IRHNA93064的Datasheet PDF文件第2页浏览型号IRHNA93064的Datasheet PDF文件第3页浏览型号IRHNA93064的Datasheet PDF文件第4页浏览型号IRHNA93064的Datasheet PDF文件第5页浏览型号IRHNA93064的Datasheet PDF文件第6页浏览型号IRHNA93064的Datasheet PDF文件第7页 
PD - 91447A  
IRHNA9064  
IRHNA93064  
REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7424U  
HEXFET® TRANSISTOR  
JANSF2N7424U  
P-CHANNEL  
RAD HARD  
Product Summary  
-60 Volt, 0.045Ω, RAD HARD HEXFET  
Part Number  
IRHNA9064  
IRHNA93064  
BVDSS  
-60V  
RDS(on)  
0.045Ω  
0.045Ω  
ID  
International Rectifier’s P-Channel RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage stability  
and breakdown voltage stability at total radiation doses as  
high as 3 X 105 Rads (Si). Under identical pre- and post-  
radiation test conditions, International Rectifier’s P-Channel  
RAD HARD HEXFETs retain identical electrical specifica-  
tions up to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required. These devices are also ca-  
pable of surviving transient ionization pulses as high as 1 x  
1012 Rads (Si)/Sec, and return to normal operation within a  
few microseconds. Single Event Effect (SEE) testing of In-  
ternational Rectifier P-Channel RAD HARD HEXFETs has  
demonstrated immunity to SEE failure. Since the P-Chan-  
nel RAD HARD process utilizes International Rectifier’s pat-  
ented HEXFET technology, the user can expect the highest  
quality and reliability in the industry.  
-48A  
-48A  
-60V  
Features:  
!
!
!
!
!
!
!
!
!
!
!
!
!
Radiation Hardened up to 3 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
P-Channel RAD HARD HEXFET transistors also feature  
all of the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paralleling  
and temperature stability of the electrical parameters.They  
are well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio amplifi-  
ers and high-energy pulse circuits in space and weapons  
environments.  
Surface Mount  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHNA9064, IRHNA93064  
Units  
I
D
@ V  
= -12V, T = 25°C Continuous Drain Current  
-48  
GS  
C
A
I
D
@ V  
= -12V, T = 100°C Continuous Drain Current  
C
-30  
GS  
I
Pulsed Drain Current "  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-192  
300  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
2.4  
V
±20  
GS  
E
Single Pulse Avalanche Energy #  
Avalanche Current "  
500  
mJ  
A
AS  
I
-48  
AR  
E
Repetitive Avalanche Energy "  
Peak Diode Recovery dv/dt $  
Operating Junction  
30  
mJ  
V/ns  
AR  
dv/dt  
4.4  
T
-55 to 150  
J
T
Storage Temperature Range  
Package Mounting Surface Temperature  
Weight  
oC  
g
STG  
300 ( for 5 Sec.)  
3.3 (typical)  
www.irf.com  
1
8/25/98  
12345678

下载PDF

与IRHNA93064相关器件

型号 品牌 描述 获取价格 数据表
IRHNA93160 INFINEON Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Me

获取价格
IRHNA93160D INFINEON Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 300 krad(S

获取价格
IRHNA93160SCSD INFINEON Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 300 krad(S

获取价格
IRHNA93260 INFINEON RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

获取价格
IRHNB3160 INFINEON RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)

获取价格
IRHNB3260 INFINEON RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)

获取价格

与IRHNA93064相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证