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IRHNA93064

更新时间： 2024-11-19 23:58:55
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 208K
描述
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 48A I(D) | SMT

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IRHNA93064 数据手册

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PD - 91447A  
IRHNA9064  
IRHNA93064  
REPETITIVE AVALANCHE AND dv/dt RATED JANSR2N7424U  
HEXFET® TRANSISTOR  
JANSF2N7424U  
P-CHANNEL  
RAD HARD  
Product Summary  
-60 Volt, 0.045Ω, RAD HARD HEXFET  
Part Number  
IRHNA9064  
IRHNA93064  
BVDSS  
-60V  
RDS(on)  
0.045Ω  
0.045Ω  
ID  
International Rectifier’s P-Channel RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage stability  
and breakdown voltage stability at total radiation doses as  
high as 3 X 105 Rads (Si). Under identical pre- and post-  
radiation test conditions, International Rectifier’s P-Channel  
RAD HARD HEXFETs retain identical electrical specifica-  
tions up to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required. These devices are also ca-  
pable of surviving transient ionization pulses as high as 1 x  
1012 Rads (Si)/Sec, and return to normal operation within a  
few microseconds. Single Event Effect (SEE) testing of In-  
ternational Rectifier P-Channel RAD HARD HEXFETs has  
demonstrated immunity to SEE failure. Since the P-Chan-  
nel RAD HARD process utilizes International Rectifier’s pat-  
ented HEXFET technology, the user can expect the highest  
quality and reliability in the industry.  
-48A  
-48A  
-60V  
Features:  
!
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!
!
!
!
!
!
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Radiation Hardened up to 3 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
P-Channel RAD HARD HEXFET transistors also feature  
all of the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of paralleling  
and temperature stability of the electrical parameters.They  
are well-suited for applications such as switching power  
supplies, motor controls, inverters, choppers, audio amplifi-  
ers and high-energy pulse circuits in space and weapons  
environments.  
Surface Mount  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHNA9064, IRHNA93064  
Units  
I
D
@ V  
= -12V, T = 25°C Continuous Drain Current  
-48  
GS  
C
A
I
D
@ V  
= -12V, T = 100°C Continuous Drain Current  
C
-30  
GS  
I
Pulsed Drain Current "  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
-192  
300  
DM  
@ T = 25°C  
P
W
W/°C  
V
D
C
2.4  
V
±20  
GS  
E
Single Pulse Avalanche Energy #  
Avalanche Current "  
500  
mJ  
A
AS  
I
-48  
AR  
E
Repetitive Avalanche Energy "  
Peak Diode Recovery dv/dt $  
Operating Junction  
30  
mJ  
V/ns  
AR  
dv/dt  
4.4  
T
-55 to 150  
J
T
Storage Temperature Range  
Package Mounting Surface Temperature  
Weight  
oC  
g
STG  
300 ( for 5 Sec.)  
3.3 (typical)  
www.irf.com  
1
8/25/98  
12345678

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