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IRHNA93260

更新时间： 2024-11-19 22:48:07
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 119K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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中文翻译

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IRHNA93260 数据手册

 浏览型号IRHNA93260的Datasheet PDF文件第2页浏览型号IRHNA93260的Datasheet PDF文件第3页浏览型号IRHNA93260的Datasheet PDF文件第4页浏览型号IRHNA93260的Datasheet PDF文件第5页浏览型号IRHNA93260的Datasheet PDF文件第6页浏览型号IRHNA93260的Datasheet PDF文件第7页 
PD - 93969  
IRHNA9260  
JANSR2N7426U  
200V,P-CHANNEL  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
Product Summary  
REF: MIL-PRF-19500/655  
RAD-Hard™ HEXFET® TECHNOLOGY  
Part Number Radiation Level  
IRHNA9260 100K Rads (Si)  
IRHNA93260 300K Rads (Si)  
RDS(on)  
ID  
QPL Part Number  
0.154Ω -29A JANSR2N7426U  
0.154Ω -29A JANSF2N7426U  
SMD-2  
International Rectifier’s RAD-HardTM HEXFET®  
MOSFET technology provides high performance  
power MOSFETs for space applications. This tech-  
nology has over a decade of proven performance  
and reliability in satellite applications. These de-  
vices have been characterized for both Total Dose  
and Single Event Effects (SEE). The combination  
of low RDS(on) and low gate charge reduces the  
power losses in switching applications such as DC  
to DC converters and motor control. These de-  
vices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switch-  
ing, ease of paralleling and temperature stability  
of electrical parameters.  
Features:  
n Single Event Effect (SEE) Hardened  
n Ultra Low RDS(on)  
n Low Total Gate Charge  
n Proton Tolerant  
n Simple Drive Requirements  
n Ease of Paralleling  
n Hermetically Sealed  
n Surface Mount  
n Ceramic Package  
n Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= -12V, T = 25°C  
Continuous Drain Current  
-29  
D
GS  
C
A
I
D
= -12V, T = 100°C Continuous Drain Current  
-18  
-116  
300  
GS  
C
I
Pulsed Drain Current ➀  
DM  
@ T = 25°C  
P
Max.Power Dissipation  
W
W/°C  
V
D
C
Linear Derating Factor  
2.4  
V
GS  
Gate-to-SourceVoltage  
±20  
E
Single Pulse Avalanche Energy  
Avalanche Current ➀  
➀
500  
mJ  
A
AS  
I
-29  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
30  
mJ  
V/ns  
AR  
dv/dt  
-20  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
Pckg. Mounting Surface Temp.  
Weight  
300 (for 5s)  
3.3 (Typical)  
For footnotes refer to the last page  
www.irf.com  
1
11/21/00  
12345678

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