是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | HERMETIC SEALED, SMD-3, 3 PIN | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.76 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 100 V |
最大漏极电流 (ID): | 51 A | 最大漏源导通电阻: | 0.045 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | CERAMIC, METAL-SEALED COFIRED |
封装形状: | RECTANGULAR | 封装形式: | CHIP CARRIER |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 204 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子形式: | NO LEAD |
端子位置: | BOTTOM | 处于峰值回流温度下的最长时间: | 40 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNB4160PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNB4260 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNB4260PBF | INFINEON |
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Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me | |
IRHNB4Z60 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNB7064 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNB7160 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) | |
IRHNB7260 | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3) | |
IRHNB7264SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) | |
IRHNB7360SE | INFINEON |
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RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3) | |
IRHNB7360SEPBF | INFINEON |
获取价格 |
暂无描述 |