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IRHNB4160 PDF预览

IRHNB4160

更新时间: 2024-11-04 22:33:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 103K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)

IRHNB4160 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:HERMETIC SEALED, SMD-3, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.76
Is Samacsys:N其他特性:HIGH RELIABILITY
雪崩能效等级(Eas):500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):51 A最大漏源导通电阻:0.045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-CBCC-N3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):204 A认证状态:Not Qualified
表面贴装:YES端子形式:NO LEAD
端子位置:BOTTOM处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IRHNB4160 数据手册

 浏览型号IRHNB4160的Datasheet PDF文件第2页浏览型号IRHNB4160的Datasheet PDF文件第3页浏览型号IRHNB4160的Datasheet PDF文件第4页浏览型号IRHNB4160的Datasheet PDF文件第5页浏览型号IRHNB4160的Datasheet PDF文件第6页浏览型号IRHNB4160的Datasheet PDF文件第7页 
PD - 91795A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-3)  
IRHNB7160  
100V, N-CHANNEL  
RAD HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number  
IRHNB7160  
IRHNB3160  
IRHNB4160  
IRHNB8160  
Radiation Level RDS(on)  
100K Rads (Si) 0.040Ω  
300K Rads (Si) 0.040Ω  
600K Rads (Si) 0.040Ω  
1000K Rads (Si) 0.040Ω  
ID  
51A  
51A  
51A  
51A  
SMD-3  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
!
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Ceramic Package  
Surface Mount  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C  
Continuous Drain Current  
51  
D
GS  
C
A
I
D
= 12V, T = 100°C Continuous Drain Current  
32.5  
204  
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
DM  
@ T = 25°C  
P
300  
W
W/°C  
V
D
C
Linear Derating Factor  
2.4  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
51  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
30  
mJ  
V/ns  
AR  
dv/dt  
7.3  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 ( for 5 sec)  
3.5 (Typical )  
Lead Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
12/10/01  

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