5秒后页面跳转
IRHNB3260 PDF预览

IRHNB3260

更新时间: 2024-11-24 03:42:23
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管
页数 文件大小 规格书
8页 117K
描述
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)

IRHNB3260 数据手册

 浏览型号IRHNB3260的Datasheet PDF文件第2页浏览型号IRHNB3260的Datasheet PDF文件第3页浏览型号IRHNB3260的Datasheet PDF文件第4页浏览型号IRHNB3260的Datasheet PDF文件第5页浏览型号IRHNB3260的Datasheet PDF文件第6页浏览型号IRHNB3260的Datasheet PDF文件第7页 
PD - 91798A  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT(SMD-3)  
IRHNB7260  
200V, N-CHANNEL  
RAD HardHEXFET® TECHNOLOGY  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNB7260  
IRHNB3260  
IRHNB4260  
IRHNB8260  
100K Rads (Si) 0.070Ω  
300K Rads (Si) 0.070Ω  
600K Rads (Si) 0.070Ω  
1000K Rads (Si) 0.070Ω  
43A  
43A  
43A  
43A  
SMD-3  
International Rectifier’s RADHard HEXFET® technol-  
ogy provides high performance power MOSFETs for  
space applications. This technology has over a de-  
cade of proven performance and reliability in satellite  
applications. These devices have been character-  
ized for bothTotal Dose and Single Event Effects (SEE).  
The combination of low Rdson and low gate charge  
reduces the power losses in switching applications  
such as DC to DC converters and motor control. These  
devices retain all of the well established advantages  
of MOSFETs such as voltage control, fast switching,  
ease of paralleling and temperature stability of elec-  
trical parameters.  
Features:  
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened  
Low RDS(on)  
Low Total Gate Charge  
Proton Tolerant  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
Light Weight  
Absolute Maximum Ratings  
Pre-Irradiation  
Parameter  
Units  
I
@ V  
@ V  
= 12V, T = 25°C Continuous Drain Current  
43  
D
GS  
C
A
I
= 12V, T = 100°C Continuous Drain Current  
27  
172  
D
GS  
C
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
DM  
@ T = 25°C  
P
300  
W
W/°C  
V
D
C
2.4  
V
Gate-to-Source Voltage  
±20  
GS  
E
Single Pulse Avalanche Energy ➀  
Avalanche Current ➀  
500  
mJ  
A
AS  
I
43  
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➀  
Operating Junction  
30  
mJ  
V/ns  
AR  
dv/dt  
5.7  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 (for 5 Sec.)  
3.5 (Typical )  
Package Mounting Surface Temperature  
Weight  
For footnotes refer to the last page  
www.irf.com  
1
12/7/01  

与IRHNB3260相关器件

型号 品牌 获取价格 描述 数据表
IRHNB3Z60 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
IRHNB4160 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
IRHNB4160PBF INFINEON

获取价格

Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Me
IRHNB4260 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
IRHNB4260PBF INFINEON

获取价格

Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
IRHNB4Z60 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
IRHNB7064 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
IRHNB7160 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
IRHNB7260 INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
IRHNB7264SE INFINEON

获取价格

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)