Datasheet > IRHNA93160SCSD

IRHNA93160SCSD

更新时间： 2024-11-21 11:01:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	875K
描述
Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 300 krad(Si) TID, QIRL, On DBC carrier

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IRHNA93160SCSD 数据手册

PD-91433D

IRHNA9160

JANSR2N7425U

100V, P-CHANNEL

REF: MIL-PRF-19500/655

RAD-Hard HEXFET TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

IRHNA9160

IRHNA93160

Radiation Level

100 kRads(Si)

300 kRads(Si)

RDS(on)

0.068

I_D

QPL Part Number

-38A

JANSR2N7425U

JANSF2N7425U

SMD-2

Description

Features

IRHNA9160 is part of the International Rectifier HiRel

family of products. IR HiRel RAD-Hard HEXFET

technology provides high performance power MOSFETs

for space applications. This technology has over a decade

of proven performance and reliability in satellite

applications. These devices have been characterized for

both Total Dose and Single Event Effects (SEE). The

combination of low Rdson and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain all

of the well established advantages of MOSFETs such as

voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

 Single Event Effect (SEE) Hardened

 Identical Pre- and Post-Electrical Test Conditions

 Low RDS(on)

 Repetitive Avalanche Ratings

 Dynamic dv/dt Ratings

 Simple Drive Requirements

 Ease of Paralleling

 Hermetically Sealed

 Surface Mount

 Ceramic Package

 Light Weight

 ESD Rating: Class 3A per MIL-STD-750, Method 1020

Absolute Maximum Ratings

Parameter

Pre-Irradiation

Units

-38

I_D@ V_GS= -12V, T_C= 25°C Continuous Drain Current

I_D@ V_GS= -12V, T_C= 100°C Continuous Drain Current

-24

-152

300

2.4

I_DM

Pulsed Drain Current 

W/°C

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

± 20

500

V_GS

E_AS

I_AR

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

-38

V/ns

E_AR

dv/dt

T_J

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

-17

-55 to + 150

T_STG

Storage Temperature Range

Package Mounting Surface Temperature

Weight

°C

300 (for 5s)

3.3 (Typical)

For Footnotes refer to the page 2.

2018-03-09

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

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IRHNB4260	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
IRHNB4260PBF	INFINEON	获取价格	Power Field-Effect Transistor, 43A I(D), 200V, 0.077ohm, 1-Element, N-Channel, Silicon, Me
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