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IRHNA9160 PDF预览

IRHNA9160

更新时间： 2024-11-23 22:29:11
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
4页 130K
描述
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A)

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IRHNA9160 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：SMD2, 3 PINReach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.16
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：100 V
最大漏极电流 (Abs) (ID)：38 A最大漏极电流 (ID)：38 A
最大漏源导通电阻：0.071 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
最低工作温度：-55 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：CHIP CARRIER
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：P-CHANNEL
最大功率耗散 (Abs)：300 W最大脉冲漏极电流 (IDM)：152 A
认证状态：Not Qualified参考标准：RH - 100K Rad(Si)
子类别：Other Transistors表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
最大关闭时间（toff）：380 ns最大开启时间（吨）：205 ns
Base Number Matches：1

IRHNA9160 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1433  
IRHNA9160  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
P-CHANNEL  
RADHARD  
-100Volt, 0.087Ω, RAD HARD HEXFET  
Product Summary  
International Rectifier’s P-Channel RAD HARD technology  
HEXFETs demonstrate excellent threshold voltage stability  
and breakdown voltage stability at total radiation doses as  
high as 105 rads (Si). Underidentical pre- and post-radiation  
test conditions, International Rectifier’s P-Channel RAD  
HARD HEXFETs retain identical electrical specifications  
up to 1 x 105 Rads (Si) total dose. No compensation in gate  
drive circuitry is required.These devices are also capable of  
surviving transient ionization pulses as high as 1 x 1012 Rads  
(Si)/Sec, and return to normal operation within a few micro-  
seconds. Single Event Effect (SEE) testing of International  
Rectifier’s P-Channel RAD HARD HEXFETs has demon-  
strated virtual immunity to SEE failure. Since the RAD HARD  
process utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality and reli-  
ability in the industry.  
Part Number  
BVDSS  
RDS(on)  
ID  
IRHNA9160  
-100V  
0.087Ω  
-38A  
Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ NeutronTolerant  
■ Identical Pre- and Post-ElectricalTest Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Surface Mount  
■ Lightweight  
P- Channel RAD HARD HEXFET transistors also feature all  
of the well-established advantages of MOSFETs, such as  
voltage control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters. They are  
well-suited for applications such as switching power sup-  
plies, motor controls, inverters, choppers, audio amplifiers  
and high-energy pulse circuits in space and weapons envi-  
ronments.  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHNA9160  
Units  
I
D
@ V  
@ V  
= -12V, T = 25oC Continuous Drain Current  
-38  
GS C  
A
I
= -12V, T = 100oC Continuous Drain Current  
C
-24  
D
GS  
I
Pulsed Drain Current➀  
Max.Power Dissipation  
Linear Derating Factor  
-152  
300  
DM  
@T = 25oC  
P
D
W
W/K➄  
V
C
2.4  
V
GS  
Gate-to-SourceVoltage  
±20  
E
Single Pulse Avalanche Energy ➁  
Avalanche Current➀  
500  
mJ  
AS  
I
-38  
A
AR  
E
Repetitive Avalanche Energy➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
30  
mJ  
AR  
dv/dt  
-5.5  
V/ns  
T
-55 to 150  
J
oC  
g
T
STG  
StorageTemperature Range  
(for 5 sec.)  
Package Mounting SurfaceTemperature  
Weight  
300  
3.3 (typical)  
To Order  
 
 
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