是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 包装说明: | CHIP CARRIER, R-CBCC-N3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.68 |
Is Samacsys: | N | 其他特性: | HIGH RELIABILITY, AVALANCHE RATED |
雪崩能效等级(Eas): | 500 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 60 V |
最大漏极电流 (ID): | 48 A | 最大漏源导通电阻: | 0.048 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-CBCC-N3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装形状: | RECTANGULAR |
封装形式: | CHIP CARRIER | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | P-CHANNEL | 最大脉冲漏极电流 (IDM): | 192 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | NO LEAD | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRHNA9064SCSPBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 48A I(D), 60V, 0.048ohm, 1-Element, P-Channel, Silicon, Met |
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IRHNA9160 | INFINEON |
获取价格 |
TRANSISTOR P-CHANNEL(BVdss=-100V, Rds(on)=0.087ohm, Id=-38A) |
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IRHNA9160_15 | INFINEON |
获取价格 |
Simple Drive Requirements |
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IRHNA9160D | INFINEON |
获取价格 |
Power Field-Effect Transistor, |
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IRHNA9160PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Me |
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IRHNA9260 | INFINEON |
获取价格 |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2) |
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IRHNA93064 | ETC |
获取价格 |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 48A I(D) | SMT |
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IRHNA93160 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 38A I(D), 100V, 0.071ohm, 1-Element, P-Channel, Silicon, Me |
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IRHNA93160D | INFINEON |
获取价格 |
Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 300 krad(S |
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IRHNA93160SCSD | INFINEON |
获取价格 |
Rad hard, -100V, -38A, single, P-channel MOSFET, R4 in a SMD-2 package - SMD-2, 300 krad(S |
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