Datasheet > FDD4685

FDD4685

更新时间： 2024-11-18 17:15:39

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	638K
描述
种类:P-Channel;漏源电压（Vdss）:-40V;持续漏极电流（Id）（在25°C时）:-8.4A;Vgs(th)(V):±20;漏源导通电阻:27mΩ@-10V

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FDD4685 数据手册

FDD4685

-40V P-Channel MOSFET

UMW

General Description

This P-Channel MOSFET has been produced

using technology to deliver low r_DS(on)and

good switching characteristic offering superior

performance in application.

Features

•

V_DS(V) = -40V

I_D=- 8.4A (V_GS= -10V)

R_DS(ON)<27mΩ (V _GS= -10V)

R_DS(ON)< 35mΩ (V _GS=- 4.5V)

•

High performance trench technology for extremely low r_DS(on)

RoHS Compliant

•

Application

•

Inverter

Power Supplies

•

MOSFET Maximum Ratings ^T_C= 25°C unless otherwise noted

Symbol

V_DS

V_GS

Parameter

Ratings

–40

Units

Drain to Source Voltage

Gate to Source Voltage

±20

Drain Current -Continuous(Package Limited)

-Continuous(Silicon Limited)

-Continuous

T_C= 25°C

T_A= 25°C

–32

(Note 1)

–40

I_D

(Note 1a)

–8.4

-Pulsed

–100

121

E_AS

Drain-Source Avalanche Energy

Power Dissipation

(Note 3)

T_C= 25°C

P_D

Power Dissipation

(Note 1a)

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +150

°C

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

1.8

°C/W

(Note 1a)

www.umw-ic.com

UTD Semiconductor Co.,Limited

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