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FDS7779Z PDF预览

FDS7779Z

更新时间: 2024-11-20 17:15:35
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
6页 624K
描述
种类:P-Channel;漏源电压(Vdss):-30V;持续漏极电流(Id)(在25°C时):-16A;Vgs(th)(V):±25;漏源导通电阻:7.2mΩ@-10V

FDS7779Z 数据手册

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R
FDS7779Z  
UMW  
-30V P-Channel MOSFET  
General Description  
This P-channel MOSFET has been designed specifically  
to improve the overall efficiency of DC/DC converters  
using either synchronous or conventional switching  
PWM controllers, and battery chargers.  
5
6
7
8
4
3
2
These MOSFETs feature faster switching and lower  
gate charge than other MOSFETs with comparable  
RDS(ON) specifications.  
1
The result is a MOSFET that is easy and safer to drive  
(even at very high frequencies), and DC/DC power  
supply designs with higher overall efficiency.  
Features  
VDS (V) = -30V  
(VGS = -10V)  
ID = -16A  
RDS(ON)  
RDS(ON) <  
7.2m  
Ω(V  
GS  
=-10V)  
11.5m  
Ω(V  
GS  
=-4.5V)  
ESD protection diode (note 3)  
High performance trench technology for extremely low RDS(ON)  
High power and current handling capability  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
–30  
V
VGSS  
ID  
Gate-Source Voltage  
Drain Current – Continuous  
– Pulsed  
±25  
–16  
–50  
V
A
(Note 1a)  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
2.5  
1.2  
1
W
(Note 1c)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
50  
25  
RθJA  
RθJC  
°C/W  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1

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