Datasheet > CM2312J

CM2312J

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
应能微 - APPLIED POWER		/
页数	文件大小	规格书
5页	1285K
描述
SOT-23

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中文翻译

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CM2312J 数据手册

CM2312J

N-Channel 20V (D-S) Power MOSFET

Description

Applications

CM2312J is the N-Channel enhancement mode power

field effect transistors with high cell density, trench tech-

nology. This high density process and design have been

optimized switching performance and especially tailored to

minimize on-state resistance.



Cellular Handsets and Accessories

Personal Digital Assistants

Portable Instrumentation

Load switch

Marking Information

Features



VDS: 20V

Device Code = C1

Date Code=XX

ID: 6.1A

C1XX

RDS_ON(@VGS=4.5V) : < 21mΩ

RDS_ON(@VGS=2.5V) : < 27mΩ

RDS_ON(@VGS=1.8V) : < 38mΩ

High density cell design for extremely low RDS_ON

Excellent on-resistance and DC current capability

Equivalent Circuit and Pin Configuration

Ordering Information

SOT-23 (Top View)

Part Number

Packaging

3000/Tape & Reel

Reel Size

CM2312J

7 inch

Absolute Maximum Ratings (TA=25 ℃ unless otherwise noted)

Parameter

Symbol

VDS

Maximum

Unit

Drain-source Voltage

Gate-source Voltage

±10

VGS

TA=25°C

TA=70°C

6.1

Continuous Drain Current

Pulsed Drain Current⁽¹⁾

4.9

IDM

Total Power Dissipation @ TA=25°C ⁽²⁾

Thermal Resistance Junction-to-Ambient ⁽²⁾

Junction and Storage Temperature Range

1.3

RθJA

100

°C/W

°C

TJ,TSTG

-55 to +150

May. 2023, Rev. 1.0

1 of 5

www.appliedpowermicro.com

12 3 4 5

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