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IRHNA7460SESCS PDF预览

IRHNA7460SESCS

更新时间: 2024-11-25 14:56:11
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 1133K
描述
Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL

IRHNA7460SESCS 数据手册

 浏览型号IRHNA7460SESCS的Datasheet PDF文件第2页浏览型号IRHNA7460SESCS的Datasheet PDF文件第3页浏览型号IRHNA7460SESCS的Datasheet PDF文件第4页浏览型号IRHNA7460SESCS的Datasheet PDF文件第5页浏览型号IRHNA7460SESCS的Datasheet PDF文件第6页浏览型号IRHNA7460SESCS的Datasheet PDF文件第7页 
PD-91399C  
IRHNA7460SE  
500V, N-CHANNEL  
RAD-Hard HEXFET TECHNOLOGY  
RADIATION HARDENED  
POWER MOSFET  
SURFACE MOUNT (SMD-2)  
Product Summary  
Part Number Radiation Level RDS(on)  
ID  
IRHNA7460SE  
100 kRads (Si)  
20A  
0.32  
SMD-2  
Description  
Features  
Single Event Effect (SEE) Hardened  
Ultra Low RDS(on)  
Low Total Gate Charge  
Simple Drive Requirements  
Hermetically Sealed  
Surface Mount  
IR HiRel RAD-Hard HEXFET technology provides high  
performance power MOSFETs for space applications. This  
technology has over a decade of proven performance and  
reliability in satellite applications. These devices have been  
characterized for both Total Dose and Single Event Effects  
(SEE). The combination of low Rdson and low gate charge  
reduces the power losses in switching applications such as  
DC to DC converters and motor control. These devices  
retain all of the well established advantages of MOSFETs  
such as voltage control, fast switching temperature stability  
of electrical parameters.  
Light Weight  
ESD Rating: Class 3B per MIL-STD-750,  
Method 1020  
Absolute Maximum Ratings  
Pre-Irradiation  
Symbol  
Parameter  
Value  
Units  
ID1 @ VGS = 12V, TC = 25°C  
Continuous Drain Current  
20  
A
ID2 @ VGS = 12V, TC = 100°C  
IDM @ TC = 25°C  
Continuous Drain Current  
Pulsed Drain Current   
Maximum Power Dissipation  
12  
80  
PD @ TC = 25°C  
300  
W
W/°C  
V
Linear Derating Factor  
Gate-to-Source Voltage  
Single Pulse Avalanche Energy   
Avalanche Current   
2.4  
VGS  
EAS  
IAR  
± 20  
500  
mJ  
A
20  
30  
EAR  
dv/dt  
TJ  
mJ  
V/ns  
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt   
Operating Junction and  
Storage Temperature Range  
Lead Temperature  
3.8  
-55 to + 150  
TSTG  
°C  
g
300 (for 5s)  
3.3 (Typical)  
Weight  
For Footnotes, refer to the page 2.  
1
2020-12-11  
International Rectifier HiRel Products, Inc.  

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Simple Drive Requirements