Datasheet > IRHNA7360SE

IRHNA7360SE

更新时间： 2024-11-19 22:33:35

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
4页	114K
描述
TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)

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IRHNA7360SE 数据手册

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Provisional Data Sheet No. PD-9.1398A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHNA7360SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

Product Summary

Part Number

400 Volt, 0.20Ω, (SEE) RAD HARD HEXFET

International Rectifier’s (SEE)RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

BVDSS

RDS(on)

IRHNA7360SE

400V

0.20Ω

24.3A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

tion within a few microseconds. Since the SEE pro- n Gamma Dot (Flash X-Ray) Hardened

cess utilizes International Rectifier’s patented HEXFET

technology, the user can expect the highest quality and

reliability in the industry.

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

RAD HARD HEXFET transistors also feature all of the n Dynamic dv/dt Rating

well-established advantages of MOSFETs, such as

voltage control, very fast switching, ease of parallel-

ing and temperature stability of the electrical param-

eters.

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

Lightweight

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHNA7360SE

Units

@ V

= 12V, T = 25°C Continuous Drain Current

24.3

15.3

97.2

300

2.4

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

W/K ꢀ

±20

500

24.3

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

4.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 sec.)

Package Mounting Surface Temperature

Weight

300

3.3 (typical)

To Order

12 3 4

中文翻译

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与IRHNA7360SE相关器件

型号	品牌	获取价格	描述	数据表
IRHNA7360SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCSA	INFINEON	获取价格	Rad hard, 400V, 15A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7360SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7460SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
IRHNA7460SESCS	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
IRHNA8064	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA8160	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA8260	INFINEON	获取价格	TRANSISTOR N-CHANNEL

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