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IRHNA8064 PDF预览

IRHNA8064

更新时间： 2024-02-02 17:47:40
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 89K
描述
TRANSISTOR N-CHANNEL

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中文翻译

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IRHNA8064 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：CHIP CARRIER, R-CBCC-N3Reach Compliance Code：compliant
风险等级：5.7其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：60 V
最大漏极电流 (ID)：75 A最大漏源导通电阻：0.018 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CBCC-N3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大脉冲漏极电流 (IDM)：300 A
表面贴装：YES端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHNA8064 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1416  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHNA7064  
IRHNA8064  
N-CHANNEL  
MEGA RAD HARD  
60 Volt, 0.015Ω, MEGA RAD HARD HEXFET Product Summary  
Part Number  
IRHNA7064  
IRHNA8064  
BVDSS  
60V  
RDS(on)  
0.015Ω  
0.015Ω  
ID  
International Rectifier’s RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
tion within a few microseconds. Since the RAD HARD  
process utilizes International Rectifier’s patented  
HEXFET technology, the user can expect the highest  
quality and reliability in the industry.  
75A*  
75A*  
60V  
Features:  
■ Radiation Hardened up to 1 x 106 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ Neutron Tolerant  
■ Identical Pre- and Post-Electrical Test Conditions  
■ Repetitive Avalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
■ Surface Mount  
■ Lightweight  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
They are well-suited for applications such as switch-  
ing power supplies, motor controls, inverters, chop-  
pers, audio amplifiers and high-energy pulse circuits  
in space and weapons environments.  
Absolute Maximum Ratings  
Pre-Radiation  
Parameter  
IRHNA7064, IRHNA8064  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
75*  
GS  
C
A
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
56  
D
GS  
I
Pulsed Drain Current ➀  
Max. Power Dissipation  
Linear Derating Factor  
356  
DM  
@ T = 25°C  
P
D
300  
W
W/K ➄  
V
C
2.0  
V
Gate-to-Source Voltage  
Single Pulse Avalanche Energy ➁  
Avalanche Current ➀  
±20  
GS  
E
500  
mJ  
AS  
I
75*  
A
AR  
E
Repetitive Avalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
30  
mJ  
AR  
dv/dt  
4.5  
V/ns  
T
-55 to 150  
-55 to150  
J
T
Storage Temperature Range  
oC  
STG  
(for 5 sec.)  
Package Mounting Surface Temperature  
Weight  
300  
3.3 (typical)  
g
Notes: See page 4  
*Current is limited by pin diameter  
To Order  
 
 
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