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IRHNA7460SE PDF预览

IRHNA7460SE

更新时间： 2024-11-04 22:33:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 115K
描述
TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)

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中文翻译

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IRHNA7460SE 技术参数

是否Rohs认证： 不符合生命周期：Active
包装说明：HERMETIC SEALED, SMD-2, 3 PINReach Compliance Code：unknown
风险等级：5.38其他特性：HIGH RELIABILITY
雪崩能效等级（Eas）：500 mJ外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：500 V
最大漏极电流 (Abs) (ID)：20 A最大漏极电流 (ID)：20 A
最大漏源导通电阻：0.36 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-CBCC-N3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：150 °C
封装主体材料：CERAMIC, METAL-SEALED COFIRED封装形状：RECTANGULAR
封装形式：CHIP CARRIER峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：300 W
最大脉冲漏极电流 (IDM)：80 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：NO LEAD
端子位置：BOTTOM处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

IRHNA7460SE 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1399A  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHNA7460SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
Product Summary  
Part Number  
500 Volt, 0.32Ω, (SEE) RAD HARD HEXFET  
International Rectifier’s (SEE)RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE fail-  
ure.Additionally, under identical pre- and post-radia-  
tion test conditions, International Rectifier’s RAD HARD  
HEXFETs retain identical electrical specifications up  
to 1 x 105 Rads (Si) total dose. No compensation in  
gate drive circuitry is required.These devices are also  
capable of surviving transient ionization pulses as high  
as 1 x 1012 Rads (Si)/Sec, and return to normal opera-  
BVDSS  
RDS(on)  
ID  
IRHNA7460SE  
500V  
0.32Ω  
20A  
Features:  
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
tion within a few microseconds. Since the SEE pro- n Gamma Dot (Flash X-Ray) Hardened  
cess utilizes International Rectifier’s patented HEXFET  
technology, the user can expect the highest quality and  
reliability in the industry.  
n
n
n
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
RAD HARD HEXFET transistors also feature all of the n Dynamic dv/dt Rating  
well-established advantages of MOSFETs, such as volt-  
age control, very fast switching, ease of paralleling and  
temperature stability of the electrical parameters.  
n
n
n
n
n
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
Surface Mount  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers,  
audio amplifiers and high-energy pulse circuits in space  
and weapons environments.  
Lightweight  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHNA7460SE  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
20  
GS  
C
A
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
12  
D
GS  
I
Pulsed Drain Current  
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
80  
DM  
@ T = 25°C  
P
300  
W
W/K ꢀ  
V
D
C
2.4  
V
±20  
500  
20  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current  
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
30  
mJ  
AR  
dv/dt  
3.5  
V/ns  
T
-55 to 150  
J
oC  
g
T
STG  
StorageTemperature Range  
(for 5 sec.)  
Package Mounting Surface Temperature  
Weight  
300  
3.3 (typical)  
To Order  
 
 
1234

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 		TRANSISTOR P-CHANNEL(BVdss=-60V, Rds(on)=0.055ohm, Id=-48A)
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