Datasheet > IRHNA7360SEPBF

IRHNA7360SEPBF

更新时间： 2024-11-20 19:59:51

品牌	Logo	应用领域
英飞凌 - INFINEON		开关脉冲晶体管
页数	文件大小	规格书
8页	125K
描述
Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-2, 3 PIN

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IRHNA7360SEPBF 数据手册

PD - 91398

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHNA7360SE

N-CHANNEL

SINGLE EVENT EFFECT (SEE) RAD HARD

400Volt, 0.20Ω, (SEE) RAD HARD HEXFET

Product Summary

International Rectifier’s (SEE) RAD HARD technol-

ogy HEXFETs demonstrate immunity to SEE failure.

These devices are also capable of surviving transient

ionization pulses as high as 1 x 10¹²Rads (Si)/Sec,

and return to normal operation within a few microsec-

onds. Since the SEE process utilizes International

Rectifier’s patented HEXFET technology, the user can

expect the highest quality and reliability in the indus-

try.

Part Number

BVDSS

RDS(on)

IRHNA7360SE

400V

0.20Ω

24A

Features:

Radiation Hardened up to 1 x 10⁵Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

RAD HARD HEXFET transistors also feature all of

the well-established advantages of MOSFETs, such

as voltage control, very fast switching, ease of par-

alleling and temperature stability of the electrical pa-

rameters. They are well-suited for applications such

as switching power supplies, motor controls, invert-

ers, choppers, audio amplifiers and high-energy

pulse circuits in space and weapons environments.

Surface Mount

Light Weight

Pre-Radiation

Pre-Irradiation

Absolute Maximum Ratings

Parameter

IRHNA7360SE

Units

@ V

= 12V, T = 25°C Continuous Drain Current

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

@ T = 25°C

300

2.4

W/K ꢀ

±20

500

Single Pulse Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

3.0

V/ns

-55 to 150

Storage Temperature Range

^oC

STG

300 (for 5 sec.)

3.3 (typical)

Package Mounting

Surface Temperature

Weight

www.irf.com

6/22/98

12 3 4 5 6 7 8

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与IRHNA7360SEPBF相关器件

型号	品牌	获取价格	描述	数据表
IRHNA7360SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCSA	INFINEON	获取价格	Rad hard, 400V, 15A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7360SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7460SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
IRHNA7460SESCS	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)
IRHNA8064	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA8160	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA8260	INFINEON	获取价格	TRANSISTOR N-CHANNEL
IRHNA8Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

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