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IRHNA7360SESCS PDF预览

IRHNA7360SESCS

更新时间: 2024-11-25 08:36:47
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 125K
描述
Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD2, 3 PIN

IRHNA7360SESCS 数据手册

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PD - 91398  
REPETITIVE AVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHNA7360SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
400Volt, 0.20, (SEE) RAD HARD HEXFET  
Product Summary  
International Rectifier’s (SEE) RAD HARD technol-  
ogy HEXFETs demonstrate immunity to SEE failure.  
These devices are also capable of surviving transient  
ionization pulses as high as 1 x 1012 Rads (Si)/Sec,  
and return to normal operation within a few microsec-  
onds. Since the SEE process utilizes International  
Rectifier’s patented HEXFET technology, the user can  
expect the highest quality and reliability in the indus-  
try.  
Part Number  
BVDSS  
RDS(on)  
ID  
IRHNA7360SE  
400V  
0.20Ω  
24A  
Features:  
n
n
n
n
n
n
n
n
n
n
n
n
n
Radiation Hardened up to 1 x 105 Rads (Si)  
Single Event Burnout (SEB) Hardened  
Single Event Gate Rupture (SEGR) Hardened  
Gamma Dot (Flash X-Ray) Hardened  
Neutron Tolerant  
Identical Pre- and Post-Electrical Test Conditions  
Repetitive Avalanche Rating  
Dynamic dv/dt Rating  
Simple Drive Requirements  
Ease of Paralleling  
Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of  
the well-established advantages of MOSFETs, such  
as voltage control, very fast switching, ease of par-  
alleling and temperature stability of the electrical pa-  
rameters. They are well-suited for applications such  
as switching power supplies, motor controls, invert-  
ers, choppers, audio amplifiers and high-energy  
pulse circuits in space and weapons environments.  
Surface Mount  
Light Weight  
Pre-Irradiation  
Absolute Maximum Ratings  
Parameter  
IRHNA7360SE  
Units  
I
D
@ V  
= 12V, T = 25°C Continuous Drain Current  
24  
GS  
C
A
I
@ V  
= 12V, T = 100°C Continuous Drain Current  
C
15  
D
GS  
I
Pulsed Drain Current   
Max. Power Dissipation  
Linear Derating Factor  
Gate-to-Source Voltage  
96  
DM  
@ T = 25°C  
P
D
300  
2.4  
W
W/K ꢀ  
V
C
V
±20  
500  
24  
GS  
E
Single Pulse Avalanche Energy ‚  
Avalanche Current   
mJ  
AS  
I
A
AR  
E
Repetitive Avalanche Energy   
Peak Diode Recovery dv/dt ƒ  
Operating Junction  
30  
mJ  
AR  
dv/dt  
3.0  
V/ns  
T
-55 to 150  
J
T
Storage Temperature Range  
oC  
g
STG  
300 (for 5 sec.)  
3.3 (typical)  
Package Mounting  
Surface Temperature  
Weight  
www.irf.com  
1
6/22/98  

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