Datasheet > IRHNA7360SESCSA

IRHNA7360SESCSA

更新时间： 2024-11-25 14:56:15

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	178K
描述
Rad hard, 400V, 15A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL, Lead attached

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IRHNA7360SESCSA 数据手册

PD-91398B

RADIATION HARDENED

POWER MOSFET

IRHNA7360SE

400V, N-CHANNEL

SURFACE MOUNT (SMD-2) RAD Hard^™HEXFET^®TECHNOLOGY

Product Summary

Part Number Radiation Level RDS(on)

IRHNA7360SE 100K Rads (Si) 0.20Ω

24A

SMD-2

International Rectifier’s RADHard^TMHEXFET^®MOSFET

technology provides high performance power MOSFETs

for space applications. This technology has over a

decade of proven performance and reliability in satellite

applications. These devices have been characterized

for both Total Dose and Single Event Effects (SEE). The

combination of low RDS(on) and low gate charge reduces

the power losses in switching applications such as DC to

DC converters and motor control. These devices retain

all of the well established advantages of MOSFETs such

as voltage control, fast switching, ease of paralleling and

temperature stability of electrical parameters.

Features:

Single Event Effect (SEE) Hardened

Ultra Low RDS(on)

Low Total Gate Charge

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light Weight

Absolute Maximum Ratings

Pre-Irradiation

Parameter

Units

@ V

= 12V, T = 25°C Continuous Drain Current

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current À

Max. Power Dissipation

Linear Derating Factor

@ T = 25°C

300

W/°C

2.4

Gate-to-Source Voltage

Single Pulse Avalanche Energy Á

Avalanche Current À

±20

310

Repetitive Avalanche Energy À

Peak Diode Recovery dv/dt Â

Operating Junction

V/ns

dv/dt

3.0

-55 to 150

^oC

Storage Temperature Range

STG

Package Mounting Surface Temperature

Weight

300 (for 5 sec.)

3.3 (Typical)

For footnotes refer to the last page

www.irf.com

08/04/05

12 3 4 5 6 7 8

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