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IRHNA7264SE

更新时间： 2024-11-19 22:33:35
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管
页数 文件大小 规格书
4页 105K
描述
TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)

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中文翻译

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IRHNA7264SE 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
包装说明：SMALL OUTLINE, R-CDSO-N3Reach Compliance Code：not_compliant
ECCN代码：EAR99风险等级：5.46
其他特性：HIGH RELIABILITY雪崩能效等级（Eas）：500 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：250 V最大漏极电流 (Abs) (ID)：34 A
最大漏极电流 (ID)：34 A最大漏源导通电阻：0.123 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJESD-30 代码：R-CDSO-N3
JESD-609代码：e0元件数量：1
端子数量：3工作模式：ENHANCEMENT MODE
最高工作温度：150 °C封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大功率耗散 (Abs)：300 W最大脉冲漏极电流 (IDM)：136 A
认证状态：Not Qualified子类别：FET General Purpose Power
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
端子形式：NO LEAD端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON

IRHNA7264SE 数据手册

 浏览型号IRHNA7264SE的Datasheet PDF文件第2页浏览型号IRHNA7264SE的Datasheet PDF文件第3页浏览型号IRHNA7264SE的Datasheet PDF文件第4页 
Previous Datasheet  
Index  
Next Data Sheet  
Provisional Data Sheet No. PD-9.1432A  
REPETITIVEAVALANCHE AND dv/dt RATED  
HEXFET® TRANSISTOR  
IRHNA7264SE  
N-CHANNEL  
SINGLE EVENT EFFECT (SEE) RAD HARD  
250Volt, 0.110Ω, (SEE) RAD HARD HEXFET  
Part Number  
BVDSS  
RDS(on)  
ID  
International Rectifier’s (SEE) RAD HARD technology  
HEXFETs demonstrate virtual immunity to SEE failure.  
Additionally, under identical pre- and post-radiation test  
conditions, International Rectifier’s RADHARD HEXFETs  
retain identical electrical specifications up to 1 x 105  
Rads (Si) total dose. No compensation in gate drive cir-  
cuitry is required. These devices are also capable of  
surviving transient ionization pulses as high as 1 x 1012  
Rads (Si)/Sec, and return to normal operation within a  
few microseconds. Since the SEE process utilizes In-  
ternational Rectifier’s patented HEXFETtechnology, the  
user can expect the highest quality and reliability in the  
industry.  
IRHNA7264SE  
250V  
0.110Ω  
34A  
Features:  
■ Radiation Hardened up to 1 x 105 Rads (Si)  
■ Single Event Burnout (SEB) Hardened  
■ Single Event Gate Rupture (SEGR) Hardened  
■ Gamma Dot (Flash X-Ray) Hardened  
■ NeutronTolerant  
■ Identical Pre- and Post-ElectricalTest Conditions  
■ RepetitiveAvalanche Rating  
■ Dynamic dv/dt Rating  
■ Simple Drive Requirements  
■ Ease of Paralleling  
■ Hermetically Sealed  
RAD HARD HEXFET transistors also feature all of the  
well-established advantages of MOSFETs, such as  
voltage control, very fast switching, ease of paralleling  
and temperature stability of the electrical parameters.  
■ Surface Mount  
■ Lightweight  
They are well-suited for applications such as switching  
power supplies, motor controls, inverters, choppers,  
audio amplifiers and high-energy pulsecircuits in space  
and weapons environments.  
Product Summary  
Pre-Radiation  
Absolute Maximum Ratings  
Parameter  
IRHNA7264SE  
Units  
I
D
@ V  
@ V  
= 12V, T = 25oC Continuous Drain Current  
34  
GS C  
A
I
D
= 12V, T = 100oC Continuous Drain Current  
C
21  
GS  
I
Pulsed Drain Current➀  
Max. Power Dissipation  
136  
DM  
@ T = 25oC  
P
D
300  
W
W/K➄  
V
C
Linear Derating Factor  
2.4  
V
Gate-to-Source Voltage  
±20  
500  
GS  
E
Single PulseAvalanche Energy ➁  
Avalanche Current➀  
mJ  
AS  
I
34  
A
AR  
E
RepetitiveAvalanche Energy ➀  
Peak Diode Recovery dv/dt ➂  
Operating Junction  
30  
mJ  
AR  
dv/dt  
4.0  
V/ns  
T
-55 to 150  
J
oC  
g
T
STG  
StorageTemperature Range  
(for 5 sec.)  
Package Mounting SurfaceTemperature  
Weight  
300  
3.3 (typical)  
To Order  
 
 
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