IRHNA7260SESCSPBF

更新时间： 2024-02-08 11:16:39

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Provisional Data Sheet No. PD-9.1397

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET^®TRANSISTOR

IRHNA7260

IRHNA8260

N-CHANNEL

MEGA RAD HARD

Product Summary

200 Volt, 0.070Ω, MEGA RAD HARD HEXFET

Part Number

IRHNA7260

IRHNA8260

BVDSS

200V

RDS(on)

0.070Ω

International Rectifier’s RAD HARD technology

HEXFETs demonstrate virtual immunity to SEE fail-

ure.Additionally, under identical pre- and post-radia-

tion test conditions, International Rectifier’s RAD HARD

HEXFETs retain identical electrical specifications up

to 1 x 10⁵Rads (Si) total dose. No compensation in

gate drive circuitry is required.These devices are also

capable of surviving transient ionization pulses as high

as 1 x 10¹²Rads (Si)/Sec, and return to normal opera-

tion within a few microseconds. Since the RAD HARD

process utilizes International Rectifier’s patented

HEXFET technology, the user can expect the highest

quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as

voltage control, very fast switching, ease of parallel-

ing and temperature stability of the electrical param-

eters.

They are well-suited for applications such as switch-

ing power supplies, motor controls, inverters, chop-

pers, audio amplifiers and high-energy pulse circuits

in space and weapons environments.

43A

200V

Features:

Radiation Hardened up to 1 x 10⁶Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Lightweight

Pre-Radiation

Absolute Maximum Ratings

Parameter

IRHNA7260, IRHNA8260

Units

@ V

= 12V, T = 25°C Continuous Drain Current

@ V

= 12V, T = 100°C Continuous Drain Current

Pulsed Drain Current

Max. Power Dissipation

Linear Derating Factor

Gate-to-SourceVoltage

172

300

2.4

@ T = 25°C

W/K ꢀ

±20

Single Pulse Avalanche Energy

Avalanche Current

500

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction

dv/dt

5.0

V/ns

-55 to 150

^oC

Storage Temperature Range

STG

(for 5 sec.)

Package Mounting Surface Temperature

Weight

300

3.3 (typical)

To Order

12 3 4

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IRHNA7360SEPBF	INFINEON	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met	获取价格
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