Datasheet > IRHNA7260SESCV

IRHNA7260SESCV

更新时间： 2024-11-21 14:56:43

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	1130K
描述
Rad hard, 200V, 27A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si) TID, QIRL

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRHNA7260SESCV 数据手册

PD-97967

IRHNA7260SE

200V, N-CHANNEL

RAD-Hard HEXFET TECHNOLOGY

RADIATION HARDENED

POWER MOSFET

SURFACE MOUNT (SMD-2)

Product Summary

Part Number

Radiation Level

RDS(on)

I_D

IRHNA7260SE

100 kRads(Si)

43A

0.07

SMD-2

Description

Features

 Single Event Effect (SEE) Hardened

 Low RDS(on)

 Low Total Gate Charge

 Simple Drive Requirements

 Hermetically Sealed

 Surface Mount

IR HiRel RAD-Hard HEXFET technology provides high

performance power MOSFETs for space applications.

This technology has a long history of proven performance

and reliability in satellite applications. These devices have

been characterized for both Total Dose and Single Event

Effects (SEE). The combination of low Rdson and low gate

charge reduces the power losses in switching applications

such as DC to DC converters and motor control. These

devices retain all of the well established advantages of

MOSFETs such as voltage control, fast switching and

temperature stability of electrical parameters.

 Ceramic Package

 Light Weight

 ESD Rating: Class 3B per MIL-STD-750,

Method 1020

Absolute Maximum Ratings

Pre-Irradiation

Symbol

Value

Parameter

Units

I_D1@ V_GS= 12V, T_C= 25°C Continuous Drain Current

I_D2@ V_GS= 12V, T_C= 100°C Continuous Drain Current

172

I_DM@ T_C= 25°C

P_D@T_C= 25°C

Pulsed Drain Current 

Maximum Power Dissipation

300

W/°C

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

Avalanche Current 

2.4

V_GS

E_AS

I_AR

± 20

500

E_AR

dv/dt

T_J

V/ns

Repetitive Avalanche Energy 

Peak Diode Recovery dv/dt 

Operating Junction and

Storage Temperature Range

Lead Temperature

5.7

-55 to + 150

T_STG

°C

300 (for 5sec)

3.3 (Typical)

Weight

For Footnotes, refer to the page 2.

2020-06-05

International Rectifier HiRel Products, Inc.

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRHNA7260SESCV相关器件

型号	品牌	获取价格	描述	数据表
IRHNA7264SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)
IRHNA7264SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 34A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me
IRHNA7360SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
IRHNA7360SEPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCS	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCSA	INFINEON	获取价格	Rad hard, 400V, 15A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7360SESCSPBF	INFINEON	获取价格	Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7460SE	INFINEON	获取价格	TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
IRHNA7460SESCS	INFINEON	获取价格	Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7Z60	INFINEON	获取价格	RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-2)

与IRHNA7260SESCV相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

25
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

17
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

49
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

46

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNA7260SESCV

IRHNA7260SESCV 数据手册

与IRHNA7260SESCV相关器件

与IRHNA7260SESCV相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRHNA7260SESCV

IRHNA7260SESCV 数据手册

与IRHNA7260SESCV相关器件

与IRHNA7260SESCV相关文章

您还可以找

您在本页遇到什么问题？