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IRHNA7260SESCSPBF

更新时间： 2024-01-24 20:25:18
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IRHNA7260SESCSPBF 数据手册

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Previous Datasheet  
Index  
Next Data Sheet  
Pre-Radiation  
IRHNA7260, IRHNA8260 Devices  
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
BV  
Drain-to-Source Breakdown Voltage  
200  
—
—
—
—
V
V
= 0V, I = 1.0 mA  
D
DSS  
GS  
V/°C Reference to 25°C, I = 1.0 mA  
∆BV  
/∆T  
Temperature Coefficient of Breakdown  
Voltage  
0.27  
DSS  
J
D
R
Static Drain-to-Source  
On-State Resistance  
Gate Threshold Voltage  
ForwardTransconductance  
Zero Gate Voltage Drain Current  
—
—
2.0  
9.0  
—
—
—
—
—
—
—
0.070  
0.077  
4.0  
—
25  
V
V
= 12V, I = 27A  
D
DS(on)  
GS  
GS  
„
Ω
V
S ( )  
= 12V, I = 43A  
D
V
g
V
V
= V , I = 1.0 mA  
GS(th)  
fs  
DS  
DS  
GS  
D
Ω
> 15V, I  
= 27A „  
DS  
I
V
= 0.8 x Max. Rating,V  
= 0V  
DSS  
DS GS  
µA  
—
250  
V
= 0.8 x Max. Rating  
DS  
V
= 0V, T = 125°C  
GS  
J
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
Gate-to-Source Charge  
Gate-to-Drain (“Miller”) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
Fall Time  
Internal Drain Inductance  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
8.7  
100  
100  
240  
42  
84  
50  
200  
200  
200  
—
V
= 20V  
GS  
GSS  
nA  
nC  
I
V
GS  
= -20V  
GSS  
Q
Q
Q
V
= 12V, I = 43A  
GS D  
V = Max. Rating x 0.5  
DS  
g
gs  
gd  
t
V
= 100V, I = 43A,  
d(on)  
DD D  
t
R = 2.35Ω  
G
r
ns  
t
d(off)  
t
f
Measured from the  
Modified MOSFET  
symbol showing the  
internal inductances.  
L
D
S
drain lead, 6mm (0.25  
in.) from package to  
center of die.  
nH  
pF  
Measured from the  
source lead, 6mm  
(0.25 in.) from package  
to source bonding pad.  
L
Internal Source Inductance  
—
8.7  
—
C
C
C
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
—
—
—
6500  
1200  
300  
—
—
—
V
= 0V, V  
DS  
f = 1.0 MHz  
= 25V  
iss  
oss  
rss  
GS  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
I
I
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode)   
—
—
—
—
43  
172  
Modified MOSFET symbol showing the  
integral reverse p-n junction rectifier.  
S
SM  
A
V
t
Q
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
—
—
—
—
—
—
1.8  
820  
12  
V
ns  
µC  
T = 25°C, I = 43A, V  
= 0V „  
j
SD  
rr  
RR  
S
GS  
T = 25°C, I = 43A, di/dt ≤ 100 A/µs  
j
F
V
≤ 50V „  
DD  
t
ForwardTurn-OnTime  
Intrinsic turn-on time is negligible.Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min. Typ. Max. Units  
Test Conditions  
R
R
Junction-to-Case  
—
—
0.42  
thJC  
K/W ꢀ  
Junction-to-PC board  
—
TBD  
—
soldered to a copper-clad PC board  
thJ-PCB  
To Order  
1234

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与IRHNA7260SESCSPBF相关器件

型号 品牌 获取价格 描述 数据表
IRHNA7260SESCV INFINEON

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 		Rad hard, 200V, 27A, single, N-channel MOSFET, R5 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7264SE INFINEON

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 		TRANSISTOR N-CHANNEL(BVdss=250V, Rds(on)=0.110ohm, Id=34A)
IRHNA7264SEPBF INFINEON

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 		Power Field-Effect Transistor, 34A I(D), 250V, 0.123ohm, 1-Element, N-Channel, Silicon, Me
IRHNA7360SE INFINEON

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 		TRANSISTOR N-CHANNEL(BVdss=400V, RdS(on)=0.20ohm, Id=24.3A)
IRHNA7360SEPBF INFINEON

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 		Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCS INFINEON

获取价格

 		Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7360SESCSA INFINEON

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 		Rad hard, 400V, 15A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)
IRHNA7360SESCSPBF INFINEON

获取价格

 		Power Field-Effect Transistor, 24A I(D), 400V, 0.21ohm, 1-Element, N-Channel, Silicon, Met
IRHNA7460SE INFINEON

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 		TRANSISTOR N-CHANNEL(BVdss=500V, Rds(on)=0.32ohm, Id=20A)
IRHNA7460SESCS INFINEON

获取价格

 		Rad hard, 500V, 12A, single, N-channel MOSFET, R4 in a SMD-2 package - SMD-2, 100 krad(Si)

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