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IRHNA7160PBF

更新时间: 2024-01-10 17:10:05
品牌 Logo 应用领域
英飞凌 - INFINEON 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
8页 110K
描述
Power Field-Effect Transistor, 51A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SMD2, 3 PIN

IRHNA7160PBF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:CHIP CARRIER, R-CBCC-N3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.21
其他特性:AVALANCHE RATED雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (ID):51 A
最大漏源导通电阻:0.045 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-CBCC-N3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
功耗环境最大值:300 W最大脉冲漏极电流 (IDM):204 A
认证状态:Not Qualified表面贴装:YES
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IRHNA7160PBF 数据手册

 浏览型号IRHNA7160PBF的Datasheet PDF文件第1页浏览型号IRHNA7160PBF的Datasheet PDF文件第3页浏览型号IRHNA7160PBF的Datasheet PDF文件第4页浏览型号IRHNA7160PBF的Datasheet PDF文件第5页浏览型号IRHNA7160PBF的Datasheet PDF文件第6页浏览型号IRHNA7160PBF的Datasheet PDF文件第7页 
IRHNA7160  
Pre-Irradiation  
Electrical Characteristics @Tj = 25°C (Unless Otherwise Specified)  
Parameter  
Min Typ Max Units  
Test Conditions  
BV  
DSS  
Drain-to-Source Breakdown Voltage  
100  
V
V
=0 V, I = 1.0mA  
D
GS  
V/°C Reference to 25°C, I = 1.0mA  
BV  
/T Temperature Coefficient of Breakdown  
0.11  
DSS  
J
D
Voltage  
R
Static Drain-to-Source  
On-State Resistance  
Gate Threshold Voltage  
Forward Transconductance  
Zero Gate Voltage Drain Current  
2.0  
16  
0.040  
0.045  
4.0  
V
= 12V, I = 32.5A  
GS D  
DS(on)  
„
V
= 12V, I = 51A  
GS  
V = V , I = 1.0mA  
DS  
D
V
V
GS(th)  
fs  
GS  
> 15V, I  
D
g
S ( )  
V
= 32.5A „  
DS  
DS  
I
25  
250  
V = 80V,V =0V  
DS GS  
DSS  
µA  
V
= 80V  
DS  
= 0V, T = 125°C  
V
GS  
J
I
I
Gate-to-Source Leakage Forward  
Gate-to-Source Leakage Reverse  
Total Gate Charge  
4.0  
100  
-100  
310  
53  
110  
35  
V
= 20V  
= -20V  
GSS  
GSS  
GS  
nA  
nC  
V
GS  
Q
Q
Q
V
= 12V, I = 51A  
GS D  
g
gs  
gd  
d(on)  
r
Gate-to-Source Charge  
Gate-to-Drain (‘Miller’) Charge  
Turn-On Delay Time  
Rise Time  
Turn-Off Delay Time  
FallTime  
V
= 50V  
DS  
t
t
t
t
V
DD  
= 50V, I = 51A,  
D
150  
150  
200  
R
G
= 2.35Ω  
ns  
d(off)  
f
L
L
Total Inductance  
S +  
D
nH  
Measured from center of drain  
pad to center of source pad  
C
C
C
Input Capacitance  
Output Capacitance  
5300  
1600  
350  
V
= 0V, V  
= 25V  
iss  
oss  
rss  
GS  
DS  
f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
Source-Drain Diode Ratings and Characteristics  
Parameter  
Min Typ Max Units  
Test Conditions  
I
I
V
t
Continuous Source Current (Body Diode)  
Pulse Source Current (Body Diode) ➀  
Diode Forward Voltage  
51  
204  
1.8  
520  
6.5  
S
A
SM  
V
T = 25°C, I = 51A, V  
= 0V ➀  
j
SD  
rr  
S
GS  
Reverse Recovery Time  
nS  
µC  
T = 25°C, I = 51A, di/dt 100A/µs  
j
F
Q
Reverse Recovery Charge  
V
DD  
25V ➀  
RR  
t
Forward Turn-On Time  
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .  
S D  
on  
Thermal Resistance  
Parameter  
Min Typ Max Units  
Test Conditions  
R
R
Junction-to-Case  
Junction-to-PC Board  
1.6  
0.42  
thJC  
thJPCB  
°C/W  
Solder to a 1” sq. copper clad PC Board  
Note: Corresponding Spice and Saber models are available on the G&S Website.  
For footnotes refer to the last page  
2
www.irf.com  

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