Datasheet > AP6926GMT

AP6926GMT

更新时间： 2024-11-18 17:15:43

品牌	Logo	应用领域
富鼎先进 - A-POWER		/
页数	文件大小	规格书
8页	134K
描述
PMPAK-5x6

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中文翻译

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数据手册

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AP6926GMT 数据手册

AP6926GMT-HF

Halogen-Free Product

Advanced Power

Electronics Corp.

DUAL N-CHANNEL ENHANCEMENT

MODE POWER MOSFET

▼ Simple Drive Requirement

CH-1 BV_DSS

R_DS(ON)

40V

▼ Easy for Synchronous Buck

40mΩ

Converter Application

I_D

CH-2 BV_DSS

R_DS(ON)

15A

40V

20mΩ

24A

D2/S1

▼ RoHS Compliant & Halogen-Free

Description

I_D

Advanced Power MOSFETs from APEC provide

the designer with the best combination of fast

switching, ruggedized device design, low on-

resistance and cost-effectiveness.

G2 S2 S2 S2

S1/D2

The control MOSFET (CH-1) and synchronous

MOSFET (CH-2) co-package for synchronous buck

converters.

PMPAK^®5x6

G1 D1 D1 D1

Absolute Maximum Ratings@T_j=25^oC(unless otherwise specified)

Symbol

Parameter

Rating

Units

CH-1

CH-2

V_DS

V_GS

Drain-Source Voltage

Gate-Source Voltage

+20

I_D@T_C=25℃

I_D@T_A=25℃

I_D@T_A=70℃

I_DM

Continuous Drain Current (Chip Limited)

Continuous Drain Current³

Pulsed Drain Current¹

6.7

5.4

10.5

8.4

P_D@T_A=25℃

T_STG

Total Power Dissipation

3.13

3.9

℃

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

T_J

Thermal Data

Rating

Symbol

Parameter

Units

CH-1

CH-2

Rthj-c

Rthj-a

Maximum Thermal Resistance, Junction-case

Maximum Thermal Resistance, Junction-ambient³

Maximum Thermal Resistance, Junction-ambient⁴

℃/W

Data & specifications subject to change without notice

201412081NT

12 3 4 5 6 7 8

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