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IRFB3307PBF PDF预览

IRFB3307PBF

更新时间: 2024-11-18 12:29:43
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
12页 362K
描述
HEXFETPower MOSFET

IRFB3307PBF 数据手册

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PD - 96901C  
IRFB3307  
IRFS3307  
IRFSL3307  
Applications  
HEXFET® Power MOSFET  
l High Efficiency Synchronous Rectification in SMPS  
l Uninterruptible Power Supply  
l High Speed Power Switching  
D
VDSS  
RDS(on) typ.  
max.  
75V  
5.0m  
6.3m  
130A  
l Hard Switched and High Frequency Circuits  
G
Benefits  
l Improved Gate, Avalanche and Dynamic dV/dt  
Ruggedness  
ID  
S
l Fully Characterized Capacitance and Avalanche  
SOA  
l Enhanced body diode dV/dt and dI/dt Capability  
G D S  
G D S  
G D S  
D2Pak  
IRFS3307  
TO-262  
IRFSL3307  
TO-220AB  
IRFB3307  
Absolute Maximum Ratings  
Symbol  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Parameter  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current  
Max.  
130  
Units  
A
91  
510  
PD @TC = 25°C  
W
250  
Maximum Power Dissipation  
Linear Derating Factor  
1.6  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
11  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
°C  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
300  
10lb in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
270  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 16a, 16b  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.61  
–––  
62  
Units  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
RθJA  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface , TO-220  
Junction-to-Ambient, TO-220  
Junction-to-Ambient (PCB Mount) , D2Pak  
–––  
40  
www.irf.com  
1
01/20/06  

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