5秒后页面跳转
IRFB3307ZGPBF PDF预览

IRFB3307ZGPBF

更新时间: 2024-11-21 11:09:31
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 287K
描述
HEXFETPower MOSFET

IRFB3307ZGPBF 数据手册

 浏览型号IRFB3307ZGPBF的Datasheet PDF文件第2页浏览型号IRFB3307ZGPBF的Datasheet PDF文件第3页浏览型号IRFB3307ZGPBF的Datasheet PDF文件第4页浏览型号IRFB3307ZGPBF的Datasheet PDF文件第5页浏览型号IRFB3307ZGPBF的Datasheet PDF文件第6页浏览型号IRFB3307ZGPBF的Datasheet PDF文件第7页 
PD - 96212  
IRFB3307ZGPbF  
Applications  
l High Efficiency Synchronous Rectification in  
SMPS  
HEXFET® Power MOSFET  
l Uninterruptible Power Supply  
l High Speed Power Switching  
l Hard Switched and High Frequency Circuits  
D
S
VDSS  
RDS(on) typ.  
max.  
ID (Silicon Limited)  
ID (Package Limited)  
75V  
4.6m  
5.8m  
120A  
120A  
G
Benefits  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche SOA  
D
l Enhanced body diode dV/dt and dI/dt  
Capability  
l Lead-Free  
S
D
G
l Halogen-Free  
TO-220AB  
IRFB3307ZGPbF  
G
D
S
Gate  
Drain  
Source  
Absolute Maximum Ratings  
Symbol  
Parameter  
Max.  
120  
Units  
A
ID @ TC = 25°C  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Silicon Limited)  
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)  
Pulsed Drain Current  
ID @ TC = 100°C  
ID @ TC = 25°C  
IDM  
84  
120  
480  
PD @TC = 25°C  
W
230  
Maximum Power Dissipation  
1.5  
Linear Derating Factor  
W/°C  
V
VGS  
± 20  
Gate-to-Source Voltage  
6.7  
Peak Diode Recovery  
dv/dt  
TJ  
V/ns  
-55 to + 175  
Operating Junction and  
TSTG  
Storage Temperature Range  
°C  
300  
Soldering Temperature, for 10 seconds  
(1.6mm from case)  
10lbf in (1.1N m)  
Mounting torque, 6-32 or M3 screw  
Avalanche Characteristics  
Single Pulse Avalanche Energy  
EAS (Thermally limited)  
140  
mJ  
A
Avalanche Current  
IAR  
See Fig. 14, 15, 22a, 22b  
Repetitive Avalanche Energy  
EAR  
mJ  
Thermal Resistance  
Symbol  
Parameter  
Typ.  
–––  
Max.  
0.65  
–––  
62  
Units  
RθJC  
Junction-to-Case  
RθCS  
RθJA  
0.50  
–––  
°C/W  
Case-to-Sink, Flat Greased Surface , TO-220  
Junction-to-Ambient, TO-220  
www.irf.com  
1
01/06/09  

与IRFB3307ZGPBF相关器件

型号 品牌 获取价格 描述 数据表
IRFB3307ZPBF INFINEON

获取价格

HEXFET Power MOSFET
IRFB33N15D INFINEON

获取价格

Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)
IRFB33N15DPBF INFINEON

获取价格

High frequency DC-DC converters
IRFB3407ZPBF INFINEON

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFB3507 INFINEON

获取价格

HEXFET Power MOSFET
IRFB3507PBF INFINEON

获取价格

HEXFET㈢Power MOSFET
IRFB3607GPBF INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
IRFB3607PBF INFINEON

获取价格

HEXFET Power MOSFET
IRFB3710 FOSHAN

获取价格

TO-263
IRFB3806 INFINEON

获取价格

The IR MOSFET™ family of power MOSFETs utiliz