Datasheet > IRFB3607GPBF

IRFB3607GPBF

更新时间： 2024-11-18 21:18:15

品牌	Logo	应用领域
英飞凌 - INFINEON		局域网开关脉冲晶体管
页数	文件大小	规格书
8页	285K
描述
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN FREE AND LEAD FREE, PLASTIC PACKAGE-3

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数据手册

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IRFB3607GPBF 数据手册

PD - 96329

IRFB3607GPbF

Applications

l High Efficiency Synchronous Rectification in

HEXFET^®Power MOSFET

SMPS

l Uninterruptible Power Supply

l High Speed Power Switching

l Hard Switched and High Frequency Circuits

V_DSS

75V

R_DS(on)typ.

max.

I_D

7.34m

9.0m

80A

Benefits

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche SOA

l Enhanced body diode dV/dt and dI/dt

Capability

l Lead-Free

l Halogen-Free

TO-220AB

IRFB3607GPbF

Gate

Drain

Source

Absolute Maximum Ratings

Symbol

Parameter

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

310

P_D@T_C= 25°C

140

Maximum Power Dissipation

Linear Derating Factor

0.96

W/°C

V_GS

± 20

Gate-to-Source Voltage

Peak Diode Recovery

dv/dt

T_J

V/ns

°C

-55 to + 175

Operating Junction and

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case)

300

10lb in (1.1N m)

Mounting torque, 6-32 or M3 screw

Avalanche Characteristics

Single Pulse Avalanche Energy

E_{AS (Thermally limited)}

120

Avalanche Current

I_AR

Repetitive Avalanche Energy

E_AR

Thermal Resistance

Symbol

Parameter

Typ.

–––

Max.

Units

R_θJC

Junction-to-Case

1.045

–––

R_θCS

R_θJA

0.50

–––

°C/W

Case-to-Sink, Flat Greased Surface, TO-220

Junction-to-Ambient, TO-220

www.irf.com

08/12/10

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