5秒后页面跳转
IRFB33N15D PDF预览

IRFB33N15D

更新时间: 2024-11-17 22:13:23
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
11页 141K
描述
Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A)

IRFB33N15D 技术参数

是否Rohs认证: 不符合生命周期:End Of Life
包装说明:FLANGE MOUNT, R-PSFM-T3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.24
Base Number Matches:1

IRFB33N15D 数据手册

 浏览型号IRFB33N15D的Datasheet PDF文件第2页浏览型号IRFB33N15D的Datasheet PDF文件第3页浏览型号IRFB33N15D的Datasheet PDF文件第4页浏览型号IRFB33N15D的Datasheet PDF文件第5页浏览型号IRFB33N15D的Datasheet PDF文件第6页浏览型号IRFB33N15D的Datasheet PDF文件第7页 
PD- 93903  
IRFB33N15D  
IRFS33N15D  
SMPS MOSFET  
IRFSL33N15D  
HEXFET® Power MOSFET  
Applications  
l High frequency DC-DC converters  
VDSS  
150V  
RDS(on) max  
ID  
33A  
0.056Ω  
Benefits  
l Low Gate-to-Drain Charge to Reduce  
Switching Losses  
l Fully Characterized Capacitance Including  
Effective COSS to Simplify Design, (See  
App. Note AN1001)  
l Fully Characterized Avalanche Voltage  
and Current  
D2Pak  
TO-262  
TO-220AB  
IRFB33N15D  
IRFS33N15D  
IRFSL33N15D  
Absolute Maximum Ratings  
Parameter  
Max.  
33  
Units  
A
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
24  
130  
PD @TA = 25°C  
PD @TC = 25°C  
Power Dissipation ‡  
3.8  
W
Power Dissipation  
170  
Linear Derating Factor  
1.1  
W/°C  
V
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
4.4  
V/ns  
-55 to + 175  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw†  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Typical SMPS Topologies  
l Telecom 48V input Active Clamp Forward Converter  
Notes  through ‡ are on page 11  
www.irf.com  
1
6/29/00  

IRFB33N15D 替代型号

型号 品牌 替代类型 描述 数据表
IRFB33N15DPBF INFINEON

类似代替

High frequency DC-DC converters

与IRFB33N15D相关器件

型号 品牌 获取价格 描述 数据表
IRFB33N15DPBF INFINEON

获取价格

High frequency DC-DC converters
IRFB3407ZPBF INFINEON

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFB3507 INFINEON

获取价格

HEXFET Power MOSFET
IRFB3507PBF INFINEON

获取价格

HEXFET㈢Power MOSFET
IRFB3607GPBF INFINEON

获取价格

Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Met
IRFB3607PBF INFINEON

获取价格

HEXFET Power MOSFET
IRFB3710 FOSHAN

获取价格

TO-263
IRFB3806 INFINEON

获取价格

The IR MOSFET™ family of power MOSFETs utiliz
IRFB3806PBF INFINEON

获取价格

HEXFETPower MOSFET
IRFB38N20D INFINEON

获取价格

Power MOSFET(Vdss=200V, Rds(on)max=0.054ohm, Id=44A)